Inventor
LEE BYEONGCHAN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “LEE BYEONGCHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS10079305B2Sep 18, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD25 citations94
US10062754B2Aug 28, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9412731B2Aug 9, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US9691902B2Jun 27, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations72
US11004976B2May 11, 2021
Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10170622B2Jan 1, 2019
Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US9373703B2Jun 21, 2016
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US10319859B2Jun 11, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9853160B2Dec 26, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10263109B2Apr 16, 2019
Semiconductor devices including silicide regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10756211B2Aug 25, 2020
Semiconductor devices including source/drain regions having multiple epitaxial patterns
SAMSUNG ELECTRONICS CO LTD0 citations49
US9553190B2Jan 24, 2017
Semiconductor devices including source/drain regions having multiple epitaxial patterns
SAMSUNG ELECTRONICS CO LTD0 citations49