Inventor

KANG SANGBOM

KR7 patents

⚠️ This page may combine multiple inventors who share the name “KANG SANGBOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

6 patents

US8012828B2Sep 6, 2011

Recess gate transistor

SAMSUNG ELECTRONICS CO LTD23 citations91

US8906761B2Dec 9, 2014

Method of manufacturing for semiconductor device using expandable material

SAMSUNG ELECTRONICS CO LTD36 citations90

US11004976B2May 11, 2021

Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71

US10170622B2Jan 1, 2019

Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations71

US8772115B2Jul 8, 2014

Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations58

US10263109B2Apr 16, 2019

Semiconductor devices including silicide regions and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50

KANG SUNGKWAN

1 patent

US8835995B2Sep 16, 2014

Semiconductor devices including silicide regions and methods of fabricating the same

KANG SUNGKWAN12 citations79