Inventor
KUNIHIRO TAKAFUMI
US22 patents
⚠️ This page may combine multiple inventors who share the name “KUNIHIRO TAKAFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
11 patentsUS9911489B2Mar 6, 2018
Memory cells, memory systems, and memory programming methods
MICRON TECHNOLOGY INC5 citations84
US9349450B2May 24, 2016
Memory devices and memory operational methods including single erase operation of conductive bridge memory cells
MICRON TECHNOLOGY INC8 citations84
US9691441B2Jun 27, 2017
Memory programming methods and memory systems
MICRON TECHNOLOGY INC4 citations83
US9293196B2Mar 22, 2016
Memory cells, memory systems, and memory programming methods
MICRON TECHNOLOGY INC5 citations81
US10783961B2Sep 22, 2020
Memory cells, memory systems, and memory programming methods
MICRON TECHNOLOGY INC1 citations73
US10622067B2Apr 14, 2020
Memory systems and memory writing methods
MICRON TECHNOLOGY INC1 citations73
US10438661B2Oct 8, 2019
Memory devices and methods of writing memory cells at different moments in time
MICRON TECHNOLOGY INC2 citations73
US10395731B2Aug 27, 2019
Memory cells, memory systems, and memory programming methods
MICRON TECHNOLOGY INC3 citations73
US10438675B2Oct 8, 2019
Memory programming methods and memory systems
MICRON TECHNOLOGY INC2 citations72
US11875866B2Jan 16, 2024
Memory programming methods and memory systems
MICRON TECHNOLOGY INC0 citations62
US11295812B2Apr 5, 2022
Memory devices and memory operational methods
MICRON TECHNOLOGY INC0 citations62
SONY CORP
7 patentsUS9070441B2Jun 30, 2015
Non-volatile memory system with reset verification mechanism and method of operation thereof
SONY CORP40 citations94
US9646690B2May 9, 2017
Non-volatile memory system with reset verification mechanism and method of operation thereof
SONY CORP2 citations73
US9530469B2Dec 27, 2016
Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereof
SONY CORP3 citations73
US9007837B2Apr 14, 2015
Non-volatile memory system with reset control mechanism and method of operation thereof
SONY CORP4 citations73
US9594516B2Mar 14, 2017
Memory device with variable trim parameters
SONY CORP0 citations52
US9153317B2Oct 6, 2015
Non-volatile memory system with power reduction mechanism and method of operation thereof
SONY CORP1 citations52
US9093147B2Jul 28, 2015
Method and apparatus for common source line charge transfer
SONY CORP0 citations52