Inventor
Ikhtiar
US12 patents
⚠️ This page may combine multiple inventors who share the name “Ikhtiar”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS10283701B1May 7, 2019
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
SAMSUNG ELECTRONICS CO LTD17 citations85
US12512137B2Dec 30, 2025
Multilayered vertical spin-orbit torque devices
SAMSUNG ELECTRONICS CO LTD2 citations74
US11009570B2May 18, 2021
Hybrid oxide/metal cap layer for boron-free free layer
SAMSUNG ELECTRONICS CO LTD2 citations69
US12457906B2Oct 28, 2025
Spin-orbit torque magnetic random-access memory (SOT-MRAM) device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11776726B2Oct 3, 2023
Dipole-coupled spin-orbit torque structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11251366B2Feb 15, 2022
Oxide interlayers containing glass-forming agents
SAMSUNG ELECTRONICS CO LTD1 citations62
US11925124B2Mar 5, 2024
Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
SAMSUNG ELECTRONICS CO LTD0 citations61
US10553642B2Feb 4, 2020
Method and system for providing magnetic junctions utilizing metal oxide layer(s)
SAMSUNG ELECTRONICS CO LTD1 citations60
NAT INST MATERIALS SCIENCE
2 patentsUS11004465B2May 11, 2021
Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used
NAT INST MATERIALS SCIENCE5 citations69
US11107976B2Aug 31, 2021
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
NAT INST MATERIALS SCIENCE0 citations49