Inventor
PARK KI TAE
KR165 patents
⚠️ This page may combine multiple inventors who share the name “PARK KI TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
34 patentsUS8031544B2Oct 4, 2011
Semiconductor memory device with three-dimensional array and repair method thereof
SAMSUNG ELECTRONICS CO LTD269 citations99
US7916511B2Mar 29, 2011
Semiconductor memory device including plurality of memory chips
SAMSUNG ELECTRONICS CO LTD44 citations98
US7652931B2Jan 26, 2010
Nonvolatile memory device with NAND cell strings
SAMSUNG ELECTRONICS CO LTD51 citations98
US7542350B2Jun 2, 2009
Methods of restoring data in flash memory devices and related flash memory device memory systems
SAMSUNG ELECTRONICS CO LTD61 citations98
US7529138B2May 5, 2009
Flash memory devices, methods of erasing flash memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD55 citations98
US7480178B2Jan 20, 2009
NAND flash memory device having dummy memory cells and methods of operating same
SAMSUNG ELECTRONICS CO LTD59 citations98
US7408806B2Aug 5, 2008
Memory array architecture for a memory device and method of operating the memory array architecture
SAMSUNG ELECTRONICS CO LTD93 citations98
US7924629B2Apr 12, 2011
Three-dimensional memory device and programming method
SAMSUNG ELECTRONICS CO LTD48 citations94
US7675783B2Mar 9, 2010
Nonvolatile memory device and driving method thereof
SAMSUNG ELECTRONICS CO LTD47 citations94
US7940564B2May 10, 2011
Three-dimensional memory device with multi-plane architecture
SAMSUNG ELECTRONICS CO LTD28 citations93
US7692970B2Apr 6, 2010
Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
SAMSUNG ELECTRONICS CO LTD37 citations93
US7551480B2Jun 23, 2009
Multi-bit flash memory device and memory cell array
SAMSUNG ELECTRONICS CO LTD13 citations93
US7508732B2Mar 24, 2009
Multi-bit flash memory device including memory cells storing different numbers of bits
SAMSUNG ELECTRONICS CO LTD29 citations93
US7492206B2Feb 17, 2009
Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD21 citations93
US7940578B2May 10, 2011
Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods
SAMSUNG ELECTRONICS CO LTD30 citations92
US7881114B2Feb 1, 2011
NAND flash memory device having dummy memory cells and methods of operating same
SAMSUNG ELECTRONICS CO LTD25 citations92
US7843733B2Nov 30, 2010
Flash memory devices having three dimensional stack structures and methods of driving same
SAMSUNG ELECTRONICS CO LTD29 citations92
US6566927B2May 20, 2003
Complementary pass transistor based flip-flop
SAMSUNG ELECTRONICS CO LTD39 citations89
US9076534B2Jul 7, 2015
Flash memory device using adaptive program verification scheme and related method of operation
SAMSUNG ELECTRONICS CO LTD8 citations84
US9036412B2May 19, 2015
Memory device and method of determining read voltage of memory device
SAMSUNG ELECTRONICS CO LTD11 citations84
US8665649B2Mar 4, 2014
Non-volatile memory device and ISPP programming method
SAMSUNG ELECTRONICS CO LTD13 citations84
US8014201B2Sep 6, 2011
Nonvolatile memory device extracting parameters and nonvolatile memory system including the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US8004898B2Aug 23, 2011
Nonvolatile memory device, program method thereof, and memory system including the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7986560B2Jul 26, 2011
Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7916564B2Mar 29, 2011
Multi-chip semiconductor device providing enhanced redundancy capabilities
SAMSUNG ELECTRONICS CO LTD7 citations84
US7911835B2Mar 22, 2011
Programming and reading five bits of data in two non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD12 citations84
US7830724B2Nov 9, 2010
Nonvolatile memory device with NAND cell strings
SAMSUNG ELECTRONICS CO LTD8 citations84
US7812390B2Oct 12, 2010
Semiconductor memory device with memory cells on multiple layers
SAMSUNG ELECTRONICS CO LTD9 citations84
US7787306B2Aug 31, 2010
Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US7773427B2Aug 10, 2010
Non-volatile memory device and method of operating
SAMSUNG ELECTRONICS CO LTD10 citations84
US7672166B2Mar 2, 2010
Method of programming in a non-volatile memory device and non-volatile memory device for performing the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US7639529B2Dec 29, 2009
Non-volatile memory devices that utilize mirror-image programming techniques to inhibit program coupling noise and methods of programming same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7583540B2Sep 1, 2009
Flash memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7535761B2May 19, 2009
Flash memory device capable of preventing coupling effect and program method thereof
SAMSUNG ELECTRONICS CO LTD15 citations84
HALO LSI INC
3 patentsUS6914791B1Jul 5, 2005
High efficiency triple well charge pump circuit
HALO LSI INC78 citations95
US7031192B1Apr 18, 2006
Non-volatile semiconductor memory and driving method
HALO LSI INC46 citations93
US6999345B1Feb 14, 2006
Method of sense and program verify without a reference cell for non-volatile semiconductor memory
HALO LSI INC35 citations93
PARK KI TAE
2 patentsKIM MIN SEOK
2 patentsPARK KI-TAE
2 patentsHWANG CHUL-JIN
1 patentCHOI YOON HEE
1 patentYOON SANGYONG
1 patentYOON SANG YONG
1 patentCHOI MYUNG-HOON
1 patentPARK HEE SEOK
1 patentKIM MIN-SEOK
1 patentShowing the top 50 of 165 patents by PatentIndex Score.