P

Inventor

PARK KI TAE

KR165 patents
⚠️ This page may combine multiple inventors who share the name “PARK KI TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

34 patents
US8031544B2Oct 4, 2011

Semiconductor memory device with three-dimensional array and repair method thereof

SAMSUNG ELECTRONICS CO LTD269 citations99
US7916511B2Mar 29, 2011

Semiconductor memory device including plurality of memory chips

SAMSUNG ELECTRONICS CO LTD44 citations98
US7652931B2Jan 26, 2010

Nonvolatile memory device with NAND cell strings

SAMSUNG ELECTRONICS CO LTD51 citations98
US7542350B2Jun 2, 2009

Methods of restoring data in flash memory devices and related flash memory device memory systems

SAMSUNG ELECTRONICS CO LTD61 citations98
US7529138B2May 5, 2009

Flash memory devices, methods of erasing flash memory devices and memory systems including the same

SAMSUNG ELECTRONICS CO LTD55 citations98
US7480178B2Jan 20, 2009

NAND flash memory device having dummy memory cells and methods of operating same

SAMSUNG ELECTRONICS CO LTD59 citations98
US7408806B2Aug 5, 2008

Memory array architecture for a memory device and method of operating the memory array architecture

SAMSUNG ELECTRONICS CO LTD93 citations98
US7924629B2Apr 12, 2011

Three-dimensional memory device and programming method

SAMSUNG ELECTRONICS CO LTD48 citations94
US7675783B2Mar 9, 2010

Nonvolatile memory device and driving method thereof

SAMSUNG ELECTRONICS CO LTD47 citations94
US7940564B2May 10, 2011

Three-dimensional memory device with multi-plane architecture

SAMSUNG ELECTRONICS CO LTD28 citations93
US7692970B2Apr 6, 2010

Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same

SAMSUNG ELECTRONICS CO LTD37 citations93
US7551480B2Jun 23, 2009

Multi-bit flash memory device and memory cell array

SAMSUNG ELECTRONICS CO LTD13 citations93
US7508732B2Mar 24, 2009

Multi-bit flash memory device including memory cells storing different numbers of bits

SAMSUNG ELECTRONICS CO LTD29 citations93
US7492206B2Feb 17, 2009

Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD21 citations93
US7940578B2May 10, 2011

Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods

SAMSUNG ELECTRONICS CO LTD30 citations92
US7881114B2Feb 1, 2011

NAND flash memory device having dummy memory cells and methods of operating same

SAMSUNG ELECTRONICS CO LTD25 citations92
US7843733B2Nov 30, 2010

Flash memory devices having three dimensional stack structures and methods of driving same

SAMSUNG ELECTRONICS CO LTD29 citations92
US6566927B2May 20, 2003

Complementary pass transistor based flip-flop

SAMSUNG ELECTRONICS CO LTD39 citations89
US9076534B2Jul 7, 2015

Flash memory device using adaptive program verification scheme and related method of operation

SAMSUNG ELECTRONICS CO LTD8 citations84
US9036412B2May 19, 2015

Memory device and method of determining read voltage of memory device

SAMSUNG ELECTRONICS CO LTD11 citations84
US8665649B2Mar 4, 2014

Non-volatile memory device and ISPP programming method

SAMSUNG ELECTRONICS CO LTD13 citations84
US8014201B2Sep 6, 2011

Nonvolatile memory device extracting parameters and nonvolatile memory system including the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US8004898B2Aug 23, 2011

Nonvolatile memory device, program method thereof, and memory system including the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7986560B2Jul 26, 2011

Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7916564B2Mar 29, 2011

Multi-chip semiconductor device providing enhanced redundancy capabilities

SAMSUNG ELECTRONICS CO LTD7 citations84
US7911835B2Mar 22, 2011

Programming and reading five bits of data in two non-volatile memory cells

SAMSUNG ELECTRONICS CO LTD12 citations84
US7830724B2Nov 9, 2010

Nonvolatile memory device with NAND cell strings

SAMSUNG ELECTRONICS CO LTD8 citations84
US7812390B2Oct 12, 2010

Semiconductor memory device with memory cells on multiple layers

SAMSUNG ELECTRONICS CO LTD9 citations84
US7787306B2Aug 31, 2010

Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US7773427B2Aug 10, 2010

Non-volatile memory device and method of operating

SAMSUNG ELECTRONICS CO LTD10 citations84
US7672166B2Mar 2, 2010

Method of programming in a non-volatile memory device and non-volatile memory device for performing the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US7639529B2Dec 29, 2009

Non-volatile memory devices that utilize mirror-image programming techniques to inhibit program coupling noise and methods of programming same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7583540B2Sep 1, 2009

Flash memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7535761B2May 19, 2009

Flash memory device capable of preventing coupling effect and program method thereof

SAMSUNG ELECTRONICS CO LTD15 citations84

HALO LSI INC

3 patents

PARK KI TAE

2 patents

KIM MIN SEOK

2 patents

PARK KI-TAE

2 patents

HWANG CHUL-JIN

1 patent

CHOI YOON HEE

1 patent

YOON SANGYONG

1 patent

YOON SANG YONG

1 patent

CHOI MYUNG-HOON

1 patent

PARK HEE SEOK

1 patent

KIM MIN-SEOK

1 patent

Showing the top 50 of 165 patents by PatentIndex Score.