P

Inventor

KIM BO GEUN

KR34 patents
⚠️ This page may combine multiple inventors who share the name “KIM BO GEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US7327609B2Feb 5, 2008

Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US9076534B2Jul 7, 2015

Flash memory device using adaptive program verification scheme and related method of operation

SAMSUNG ELECTRONICS CO LTD8 citations84
US7426143B2Sep 16, 2008

Semiconductor memory device and related programming method

SAMSUNG ELECTRONICS CO LTD10 citations84
US9147483B2Sep 29, 2015

Apparatus and method of operating memory device

SAMSUNG ELECTRONICS CO LTD9 citations83
US7961523B2Jun 14, 2011

Nonvolatile memory device and programming method

SAMSUNG ELECTRONICS CO LTD6 citations74
US9817434B2Nov 14, 2017

Memory system controlling peak current generation for a plurality of memories by synchronizing internal clock of each memory with a processor clock at different times to avoid peak current generation period overlapping

SAMSUNG ELECTRONICS CO LTD2 citations73
US9536605B2Jan 3, 2017

Resistive memory device and operating method

SAMSUNG ELECTRONICS CO LTD2 citations73
US9269429B2Feb 23, 2016

Resistive memory device, resistive memory system, and method of operating resistive memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US9406394B2Aug 2, 2016

Flash memory device using adaptive program verification scheme and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations63
US7948328B2May 24, 2011

Oscillator generating normal clock signal

SAMSUNG ELECTRONICS CO LTD3 citations63
US7742341B2Jun 22, 2010

Semiconductor memory device and related programming method

SAMSUNG ELECTRONICS CO LTD4 citations62
US7480182B2Jan 20, 2009

NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith

SAMSUNG ELECTRONICS CO LTD5 citations61
US7352623B2Apr 1, 2008

NOR flash memory device with multi level cell and read method thereof

SAMSUNG ELECTRONICS CO LTD4 citations61
US9384840B2Jul 5, 2016

Method compensation operating voltage, flash memory device, and data storage device

SAMSUNG ELECTRONICS CO LTD1 citations52
US9355733B2May 31, 2016

Memory sensing system comprising nonvolatile memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD1 citations52
US9177660B2Nov 3, 2015

Method of operating memory device

SAMSUNG ELECTRONICS CO LTD1 citations52
US8995189B2Mar 31, 2015

Method and apparatus for managing open blocks in nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7990129B2Aug 2, 2011

Reference voltage generating circuit

SAMSUNG ELECTRONICS CO LTD0 citations40

YOON SANG YONG

2 patents

LEE YONG-KYU

2 patents

KIM BO-GEUN

2 patents

HYUNDAI MOTOR CO LTD

2 patents

CHOI YOON HEE

1 patent

YOON CHI-WEON

1 patent

KIM BO GEUN

1 patent

YOON SANG-YONG

1 patent

CHOI YOON-HEE

1 patent

LEE SUNG-YEON

1 patent

LEE HWA-SEOK

1 patent

BYEON DAE-SEOK

1 patent