Inventor
KIM BO GEUN
KR34 patents
⚠️ This page may combine multiple inventors who share the name “KIM BO GEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7327609B2Feb 5, 2008
Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US9076534B2Jul 7, 2015
Flash memory device using adaptive program verification scheme and related method of operation
SAMSUNG ELECTRONICS CO LTD8 citations84
US7426143B2Sep 16, 2008
Semiconductor memory device and related programming method
SAMSUNG ELECTRONICS CO LTD10 citations84
US9147483B2Sep 29, 2015
Apparatus and method of operating memory device
SAMSUNG ELECTRONICS CO LTD9 citations83
US7961523B2Jun 14, 2011
Nonvolatile memory device and programming method
SAMSUNG ELECTRONICS CO LTD6 citations74
US9817434B2Nov 14, 2017
Memory system controlling peak current generation for a plurality of memories by synchronizing internal clock of each memory with a processor clock at different times to avoid peak current generation period overlapping
SAMSUNG ELECTRONICS CO LTD2 citations73
US9536605B2Jan 3, 2017
Resistive memory device and operating method
SAMSUNG ELECTRONICS CO LTD2 citations73
US9269429B2Feb 23, 2016
Resistive memory device, resistive memory system, and method of operating resistive memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US9406394B2Aug 2, 2016
Flash memory device using adaptive program verification scheme and related method of operation
SAMSUNG ELECTRONICS CO LTD2 citations63
US7948328B2May 24, 2011
Oscillator generating normal clock signal
SAMSUNG ELECTRONICS CO LTD3 citations63
US7742341B2Jun 22, 2010
Semiconductor memory device and related programming method
SAMSUNG ELECTRONICS CO LTD4 citations62
US7480182B2Jan 20, 2009
NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith
SAMSUNG ELECTRONICS CO LTD5 citations61
US7352623B2Apr 1, 2008
NOR flash memory device with multi level cell and read method thereof
SAMSUNG ELECTRONICS CO LTD4 citations61
US9384840B2Jul 5, 2016
Method compensation operating voltage, flash memory device, and data storage device
SAMSUNG ELECTRONICS CO LTD1 citations52
US9355733B2May 31, 2016
Memory sensing system comprising nonvolatile memory device and related method of operation
SAMSUNG ELECTRONICS CO LTD1 citations52
US9177660B2Nov 3, 2015
Method of operating memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8995189B2Mar 31, 2015
Method and apparatus for managing open blocks in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7990129B2Aug 2, 2011
Reference voltage generating circuit
SAMSUNG ELECTRONICS CO LTD0 citations40
YOON SANG YONG
2 patentsLEE YONG-KYU
2 patentsKIM BO-GEUN
2 patentsUS9261940B2Feb 16, 2016
Memory system controlling peak current generation for a plurality of memories by monitoring a peak signal to synchronize an internal clock of each memory by a processor clock at different times
KIM BO-GEUN4 citations71
US8149621B2Apr 3, 2012
Flash memory device and method of testing the flash memory device
KIM BO-GEUN4 citations61