P

Inventor

NOZAWA KATSUYA

JP57 patents
⚠️ This page may combine multiple inventors who share the name “NOZAWA KATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PANASONIC IP MAN CO LTD

25 patents
US9605998B2Mar 28, 2017

Measurement system

PANASONIC IP MAN CO LTD76 citations98
US10542228B2Jan 21, 2020

Imaging system including illuminator and imaging device

PANASONIC IP MAN CO LTD5 citations84
US11094746B2Aug 17, 2021

Imaging device

PANASONIC IP MAN CO LTD2 citations73
US11025847B2Jun 1, 2021

Imaging device including an imaging cell having variable sensitivity

PANASONIC IP MAN CO LTD1 citations73
US11438539B2Sep 6, 2022

Imaging device including an imaging cell having variable sensitivity

PANASONIC IP MAN CO LTD0 citations63
US12426487B2Sep 23, 2025

Organic device and method for producing organic device

PANASONIC IP MAN CO LTD0 citations62
US12376393B2Jul 29, 2025

Image sensor including control electrode, transparent electrode, and connection layer electrically connecting control electrode to side surface of transparent electrode

PANASONIC IP MAN CO LTD0 citations62
US12119362B2Oct 15, 2024

Light sensor including long-pass filter and light detection system

PANASONIC IP MAN CO LTD0 citations62
US12048170B2Jul 23, 2024

Imaging device

PANASONIC IP MAN CO LTD0 citations62
US11968457B2Apr 23, 2024

Imaging apparatus, imaging system, and imaging method

PANASONIC IP MAN CO LTD0 citations62
US11955493B2Apr 9, 2024

Image sensor including control electrode, transparent electrode, and connection layer electrically connecting control electrode to side surface of transparent electrode

PANASONIC IP MAN CO LTD0 citations62
US11910625B2Feb 20, 2024

Imaging device and method for driving imaging device

PANASONIC IP MAN CO LTD0 citations62
US11812625B2Nov 7, 2023

Photoelectric converter and image sensor

PANASONIC IP MAN CO LTD0 citations62
US11793008B2Oct 17, 2023

Imaging device

PANASONIC IP MAN CO LTD0 citations62
US11177313B2Nov 16, 2021

Imaging system and imaging method

PANASONIC IP MAN CO LTD0 citations62
US10903264B2Jan 26, 2021

Imaging system and imaging method

PANASONIC IP MAN CO LTD1 citations62
US10847669B1Nov 24, 2020

Photodetection element including photoelectric conversion structure and avalanche structure

PANASONIC IP MAN CO LTD1 citations62
US10777699B2Sep 15, 2020

Photodetection element including photoelectric conversion structure and avalanche structure

PANASONIC IP MAN CO LTD1 citations62
US10708511B2Jul 7, 2020

Three-dimensional motion obtaining apparatus and three-dimensional motion obtaining method

PANASONIC IP MAN CO LTD1 citations62
US11711932B2Jul 25, 2023

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

PANASONIC IP MAN CO LTD0 citations61
US11031568B2Jun 8, 2021

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

PANASONIC IP MAN CO LTD0 citations61
US12352626B2Jul 8, 2025

Raman spectroscopy device and Raman spectroscopy measurement method

PANASONIC IP MAN CO LTD0 citations52
US12152938B2Nov 26, 2024

Imaging system and imaging method

PANASONIC IP MAN CO LTD0 citations52
US12101949B2Sep 24, 2024

Photoelectric conversion element, electronic device, and light-emitting device

PANASONIC IP MAN CO LTD0 citations52
US10672836B2Jun 2, 2020

Imaging device

PANASONIC IP MAN CO LTD0 citations52

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

18 patents
US6399970B2Jun 4, 2002

FET having a Si/SiGeC heterojunction channel

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD279 citations99
US6190975B1Feb 20, 2001

Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD230 citations99
US6852602B2Feb 8, 2005

Semiconductor crystal film and method for preparation thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD103 citations98
US6674100B2Jan 6, 2004

SiGeC-based CMOSFET with separate heterojunctions

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD58 citations96
US6399993B1Jun 4, 2002

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations96
US6455364B1Sep 24, 2002

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations95
US6277657B1Aug 21, 2001

Apparatus for fabricating semiconductor device and fabrication method therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations93
US6645836B2Nov 11, 2003

Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US6537369B1Mar 25, 2003

SiGeC semiconductor crystal and production method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6403976B1Jun 11, 2002

Semiconductor crystal, fabrication method thereof, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US6858454B1Feb 22, 2005

Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US7105449B1Sep 12, 2006

Method for cleaning substrate and method for producing semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6720587B2Apr 13, 2004

Structure evaluation method, method for manufacturing semiconductor devices, and recording medium

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6660393B2Dec 9, 2003

SiGeC semiconductor crystals and the method producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6762106B2Jul 13, 2004

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations73
US6649496B2Nov 18, 2003

Production method for semiconductor crystal

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6919253B2Jul 19, 2005

Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US6713790B2Mar 30, 2004

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62

CLARION CO LTD

6 patents

NOZAWA KATSUYA

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.