Inventor
SHIIGI TAKASHI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “SHIIGI TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
18 patentsUS9236460B2Jan 12, 2016
Semiconductor device having a diffusion region
FUJI ELECTRIC CO LTD13 citations80
US10276666B2Apr 30, 2019
Semiconductor device
FUJI ELECTRIC CO LTD2 citations73
US9997603B2Jun 12, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD3 citations73
US11749675B2Sep 5, 2023
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11456359B2Sep 27, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US10916541B2Feb 9, 2021
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US8008734B2Aug 30, 2011
Power semiconductor device
FUJI ELECTRIC CO LTD6 citations62
US12007437B2Jun 11, 2024
Test method
FUJI ELECTRIC CO LTD0 citations52
US10497784B2Dec 3, 2019
Semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US9461140B2Oct 4, 2016
Semiconductor device manufacturing method including a counter layer for power conversion
FUJI ELECTRIC CO LTD0 citations51
US10784256B2Sep 22, 2020
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10504785B2Dec 10, 2019
Semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10147792B2Dec 4, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10103229B2Oct 16, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US9299771B2Mar 29, 2016
Semiconductor device with an electric field reduction mechanism in an edge termination region surrounding the active region
FUJI ELECTRIC CO LTD0 citations40
US8999814B2Apr 7, 2015
Semiconductor device fabricating method
FUJI ELECTRIC CO LTD0 citations40
US10490625B2Nov 26, 2019
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations39
US9450110B2Sep 20, 2016
Semiconductor device
FUJI ELECTRIC CO LTD0 citations38