Inventor
YOSHIKAWA KOH
JP43 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIKAWA KOH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
17 patentsUS6380586B1Apr 30, 2002
Trench-type insulated gate bipolar transistor
FUJI ELECTRIC CO LTD46 citations92
US9825145B2Nov 21, 2017
Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
FUJI ELECTRIC CO LTD2 citations73
US8861240B2Oct 14, 2014
Power converter
FUJI ELECTRIC CO LTD5 citations73
US11749675B2Sep 5, 2023
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US10916541B2Feb 9, 2021
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US12009268B2Jun 11, 2024
Semiconductor device and fabrication method for semiconductor device
FUJI ELECTRIC CO LTD0 citations61
US11742249B2Aug 29, 2023
Semiconductor device and fabrication method for semiconductor device
FUJI ELECTRIC CO LTD0 citations61
US11450734B2Sep 20, 2022
Semiconductor device and fabrication method for semiconductor device
FUJI ELECTRIC CO LTD0 citations61
US12218228B2Feb 4, 2025
Semiconductor device and manufacturing method
FUJI ELECTRIC CO LTD0 citations52
US11245010B2Feb 8, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10109501B2Oct 23, 2018
Manufacturing method of semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US9786749B2Oct 10, 2017
Semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US9184268B2Nov 10, 2015
Semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US9355858B2May 31, 2016
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US12593479B2Mar 31, 2026
Semiconductor device having an edge termination structure and manufacturing method thereof
FUJI ELECTRIC CO LTD0 citations50
US12495596B2Dec 9, 2025
Semiconductor device and manufacturing method
FUJI ELECTRIC CO LTD0 citations50
US9577088B2Feb 21, 2017
Semiconductor device with high concentration region
FUJI ELECTRIC CO LTD0 citations42
YOSHIKAWA KOH
14 patentsUS8278682B2Oct 2, 2012
Semiconductor device
YOSHIKAWA KOH9 citations83
US8618557B2Dec 31, 2013
Wide-band-gap reverse-blocking MOS-type semiconductor device
YOSHIKAWA KOH6 citations73
US8558342B2Oct 15, 2013
Semiconductor device
YOSHIKAWA KOH2 citations62
US8334581B2Dec 18, 2012
Semiconductor device exhibiting withstand voltages in the forward and reverse directions
YOSHIKAWA KOH2 citations62
US8334565B2Dec 18, 2012
Trench type insulated gate MOS semiconductor device
YOSHIKAWA KOH4 citations62
US8258032B2Sep 4, 2012
Power semiconductor devices and methods for manufacturing the same
YOSHIKAWA KOH4 citations62
US8089094B2Jan 3, 2012
Semiconductor device
YOSHIKAWA KOH2 citations62
US8138542B2Mar 20, 2012
Semiconductor device and manufacturing method of the semiconductor device
YOSHIKAWA KOH2 citations61
US8809911B2Aug 19, 2014
Semiconductor device
YOSHIKAWA KOH1 citations52
US8742501B2Jun 3, 2014
Power semiconductor devices and methods for manufacturing the same
YOSHIKAWA KOH0 citations52
US8125027B2Feb 28, 2012
Semiconductor device having trenches extending through channel regions
YOSHIKAWA KOH0 citations52
US8089134B2Jan 3, 2012
Semiconductor device
YOSHIKAWA KOH1 citations52
US8242556B2Aug 14, 2012
Vertical and trench type insulated gate MOS semiconductor device
YOSHIKAWA KOH0 citations51
US8080846B2Dec 20, 2011
Semiconductor device having improved breakdown voltage and method of manufacturing the same
YOSHIKAWA KOH0 citations38
FUJI ELECTRIC SYSTEMS CO LTD
4 patentsUS7943439B2May 17, 2011
Method for manufacturing semiconductor apparatus
FUJI ELECTRIC SYSTEMS CO LTD6 citations63
US7943991B2May 17, 2011
Semiconductor device
FUJI ELECTRIC SYSTEMS CO LTD3 citations63
US7772677B2Aug 10, 2010
Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall
FUJI ELECTRIC SYSTEMS CO LTD2 citations63
US7737490B2Jun 15, 2010
Vertical and trench type insulated gate MOS semiconductor device
FUJI ELECTRIC SYSTEMS CO LTD4 citations62
FUJI ELECTRIC HOLDINGS
3 patentsUS7535059B2May 19, 2009
Semiconductor device and manufacturing method of the semiconductor device
FUJI ELECTRIC HOLDINGS8 citations83
US7098488B2Aug 29, 2006
Insulated gate bipolar transistor
FUJI ELECTRIC HOLDINGS19 citations83
US7276778B2Oct 2, 2007
Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent
FUJI ELECTRIC HOLDINGS0 citations42