P

Inventor

ASAI MAKOTO

JP46 patents
⚠️ This page may combine multiple inventors who share the name “ASAI MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYODA GOSEI KK

18 patents
US7138286B2Nov 21, 2006

Light-emitting semiconductor device using group III nitrogen compound

TOYODA GOSEI KK47 citations96
US6265726B1Jul 24, 2001

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

TOYODA GOSEI KK62 citations96
US6008539ADec 28, 1999

Electrodes for p-type group III nitride compound semiconductors

TOYODA GOSEI KK76 citations96
US6005258ADec 21, 1999

Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities

TOYODA GOSEI KK69 citations96
US5650641AJul 22, 1997

Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device

TOYODA GOSEI KK56 citations96
US6452214B2Sep 17, 2002

Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensity

TOYODA GOSEI KK47 citations94
US6933169B2Aug 23, 2005

Optical semiconductor device

TOYODA GOSEI KK20 citations93
US6191436B1Feb 20, 2001

Optical semiconductor device

TOYODA GOSEI KK24 citations93
US6806571B2Oct 19, 2004

III nitride compound semiconductor element an electrode forming method

TOYODA GOSEI KK20 citations92
US6121127ASep 19, 2000

Methods and devices related to electrodes for p-type group III nitride compound semiconductors

TOYODA GOSEI KK38 citations92
US7018915B2Mar 28, 2006

Group III nitride compound semiconductor device and method for forming an electrode

TOYODA GOSEI KK15 citations84
US7015515B2Mar 21, 2006

Group III nitride compound semiconductor device having a superlattice structure

TOYODA GOSEI KK18 citations83
US7867800B2Jan 11, 2011

Light-emitting semiconductor device using group III nitrogen compound

TOYODA GOSEI KK5 citations74
US7001790B2Feb 21, 2006

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

TOYODA GOSEI KK3 citations74
US6573114B1Jun 3, 2003

Optical semiconductor device

TOYODA GOSEI KK8 citations74
US6762070B2Jul 13, 2004

Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensity

TOYODA GOSEI KK9 citations71
US7332366B2Feb 19, 2008

Light-emitting semiconductor device using group III nitrogen compound

TOYODA GOSEI KK3 citations63
US6861663B2Mar 1, 2005

Group III nitride compound semiconductor light-emitting device

TOYODA GOSEI KK6 citations60

DENSO CORP

13 patents

MOMOTA SEIJI

3 patents

SUMITOMO MASAKIYO

2 patents

FURUKAWA ELECTRIC CO LTD

2 patents

NIPPON SODA CO

2 patents

FUJI ELECTRIC CO LTD

2 patents

KOYAMA MASAKI

1 patent

TSUZUKI YUKIO

1 patent

JFE STEEL CORP

1 patent

YANMAR CO LTD

1 patent