Inventor
HAN YU-PIN
US24 patents
⚠️ This page may combine multiple inventors who share the name “HAN YU-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VLSI TECHNOLOGY INC
9 patentsUS5789795AAug 4, 1998
Methods and apparatus for fabricationg anti-fuse devices
VLSI TECHNOLOGY INC68 citations95
US5409848AApr 25, 1995
Angled lateral pocket implants on p-type semiconductor devices
VLSI TECHNOLOGY INC65 citations94
US5821558AOct 13, 1998
Antifuse structures
VLSI TECHNOLOGY INC41 citations92
US5793640AAug 11, 1998
Capacitance measurement using an RLC circuit model
VLSI TECHNOLOGY INC39 citations92
US5773317AJun 30, 1998
Test structure and method for determining metal-oxide-silicon field effect transistor fringing capacitance
VLSI TECHNOLOGY INC34 citations92
US5793094AAug 11, 1998
Methods for fabricating anti-fuse structures
VLSI TECHNOLOGY INC22 citations91
US5783467AJul 21, 1998
Method of making antifuse structures using implantation of both neutral and dopant species
VLSI TECHNOLOGY INC7 citations73
US5753540AMay 19, 1998
Apparatus and method for programming antifuse structures
VLSI TECHNOLOGY INC7 citations73
US6007641ADec 28, 1999
Integrated-circuit manufacture method with aqueous hydrogen-fluoride and nitric-acid oxide etch
VLSI TECHNOLOGY INC9 citations72
SGS THOMSON MICROELECTRONICS
8 patentsUS4868138ASep 19, 1989
Method for forming a self-aligned source/drain contact for an MOS transistor
SGS THOMSON MICROELECTRONICS74 citations96
US5371041ADec 6, 1994
Method for forming a contact/VIA
SGS THOMSON MICROELECTRONICS45 citations94
US4962414AOct 9, 1990
Method for forming a contact VIA
SGS THOMSON MICROELECTRONICS103 citations94
US4771014ASep 13, 1988
Process for manufacturing LDD CMOS devices
SGS THOMSON MICROELECTRONICS52 citations93
US5770892AJun 23, 1998
Field effect device with polycrystalline silicon channel
SGS THOMSON MICROELECTRONICS33 citations92
US5135888AAug 4, 1992
Field effect device with polycrystalline silicon channel
SGS THOMSON MICROELECTRONICS33 citations92
US4981813AJan 1, 1991
Pad oxide protect sealed interface isolation process
SGS THOMSON MICROELECTRONICS20 citations82
US5256895AOct 26, 1993
Pad oxide protect sealed interface isolation
SGS THOMSON MICROELECTRONICS15 citations74
ST MICROELECTRONICS INC
3 patentsUS5821136AOct 13, 1998
Inverted field-effect device with polycrystalline silicon/germanium channel
ST MICROELECTRONICS INC18 citations92
US5801396ASep 1, 1998
Inverted field-effect device with polycrystalline silicon/germanium channel
ST MICROELECTRONICS INC34 citations92
US5847465ADec 8, 1998
Contacts for semiconductor devices
ST MICROELECTRONICS INC13 citations74