Inventor

MASZARA WITOLD P

US44 patents

⚠️ This page may combine multiple inventors who share the name “MASZARA WITOLD P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MASZARA WITOLD P

ADVANCED MICRO DEVICES INC

Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide

Fast Mosfet with low-doped source/drain

Formation of finFET using a sidewall epitaxial layer

Asymmetric semiconductor device having dual work function gate and method of fabrication

Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric

Method of formation of pseudo-SOI structures with direct contact of transistor body to the substrate

Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile

Method of growing as a channel region to reduce source/drain junction capacitance

Ultra-thin fully depleted SOI device and method of fabrication

Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects

Argon implantation after silicidation for improved floating-body effects

Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions

SOI semiconductor device opening implantation gettering method

Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions

Formation of low thermal budget shallow abrupt junctions for semiconductor devices

Fast MOSFET with low-doped source/drain

Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Wafer pattern variation of integrated circuit fabrication

Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis control

Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect

Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect

Shallow junction semiconductor and method for the fabrication thereof

SOI device with source/drain extensions and adjacent shallow pockets

Method for and device having STI using partial etch trench bottom liner

Semiconductor device with non-compounded contacts, and method of making

Method of making a hybrid SOI device that suppresses floating body effects

Semiconductor device with a silicon-on-void structure and method of making the same

Fully silicided gate structure for FinFET devices

Shallow junction semiconductor

Semiconductor solid phase epitaxy damage control method and integrated circuit produced thereby

GLOBALFOUNDRIES INC

Channel cladding last process flow for forming a channel region on a FinFET device

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process

Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices

MASZARA WITOLD P

Methods of forming FinFET devices with alternative channel materials

Methods of forming FinFET devices with alternative channel materials

Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system

ALLIED SIGNAL INC

Method for forming thickened source/drain contact regions for field effect transistors

Method for making a self-aligned lateral bipolar SOI transistor

JACOB AJEY P

Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices

XIANG QI

Strained fully depleted silicon on insulator semiconductor device