Inventor

DEMOS ALEXANDROS T

US63 patents

⚠️ This page may combine multiple inventors who share the name “DEMOS ALEXANDROS T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DEMOS ALEXANDROS T

APPLIED MATERIALS INC

Apparatus for reducing plasma charge damage for plasma processes

Post treatment of low k dielectric films

Method of reducing plasma charge damage for plasma processes

Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices

Apparatus and process for controlling the temperature of a substrate in a plasma reactor

Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices

Large area source for uniform electron beam generation

Air gap integration scheme

Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber

Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay

Ionic additives for extreme low dielectric constant chemical formulations

Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers

Ionic additives for extreme low dielectric constant chemical formulations

Processing system containing an isolation region separating a deposition chamber from a treatment chamber

Low-k dielectric damage repair by vapor-phase chemical exposure

Method for UV based silylation chamber clean

Method of improving initiation layer for low-k dielectric film by digital liquid flow meter

Aluminum nitride barrier layer

Multi-stage curing of low K nano-porous films

Enhancement in UV curing efficiency using oxygen-doped purge for ultra low-K dielectric film

Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam

Clean process for an electron beam source

Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties

UV assisted CVD AlN film for BEOL etch stop application

UV-assisted photochemical vapor deposition for damaged low K films pore sealing

Method to reduce dielectric constant of a porous low-k film

Enhancing electrical property and UV compatibility of ultrathin blok barrier film

Vacuum reaction chamber with x-lamp heater

Enhancement of modulus and hardness for UV-cured ultra low-k dielectric films

Method and hardware for cleaning UV chambers

Method and hardware for cleaning UV chambers

Multistep cure technique for spin-on-glass films

Silicon precursors to make ultra low-K films of K&lt;2.2 with high mechanical properties by plasma enhanced chemical vapor deposition

Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition

Method of improving initiation layer for low-k dielectric film by digital liquid flow meter

Electron beam treatment apparatus

Characterizing an electron beam treatment apparatus

Multi-layer dielectric stack for plasma damage protection

Multi step ebeam process for modifying dielectric materials

Techniques promoting adhesion of porous low K film to underlying barrier layer

AIR PROD & CHEM

Mesoporous films having reduced dielectric constants

Mesoporous films having reduced dielectric constants

Ionic additives for extreme low dielectric constant chemical formulations

CHAN KELVIN

Low-k dielectric damage repair by vapor-phase chemical exposure

Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer

Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer

BALUJA SANJEEV

Quartz showerhead for nanocure UV chamber

Method and apparatus for modulating wafer treatment profile in UV chamber

XIE BO

UV assisted silylation for recovery and pore sealing of damaged low K films

YIM KANG SUB

Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition

Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition