P

Inventor

YAMAHA TAKAHISA

JP34 patents
⚠️ This page may combine multiple inventors who share the name “YAMAHA TAKAHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YAMAHA CORP

29 patents
US6297563B1Oct 2, 2001

Bonding pad structure of semiconductor device

YAMAHA CORP133 citations99
US5733797AMar 31, 1998

Method of making a semiconductor device with moisture impervious film

YAMAHA CORP74 citations96
US5763936AJun 9, 1998

Semiconductor chip capable of supressing cracks in insulating layer

YAMAHA CORP68 citations95
US7211902B2May 1, 2007

Method of forming a bonding pad structure

YAMAHA CORP13 citations92
US5885857AMar 23, 1999

Semiconductor chip capable of suppressing cracks in the insulating layer

YAMAHA CORP22 citations92
US5786638AJul 28, 1998

Semiconductor device with moisture impervious film

YAMAHA CORP18 citations92
US5750403AMay 12, 1998

Method of forming multi-layer wiring utilizing hydrogen silsesquioxane resin

YAMAHA CORP26 citations92
US5593925AJan 14, 1997

Semiconductor device capable of preventing humidity invasion

YAMAHA CORP36 citations92
US5036382AJul 30, 1991

Semiconductor device having a multi-level wiring structure

YAMAHA CORP41 citations92
US6921714B2Jul 26, 2005

Method for manufacturing a semiconductor device

YAMAHA CORP10 citations74
US6888183B1May 3, 2005

Manufacture method for semiconductor device with small variation in MOS threshold voltage

YAMAHA CORP7 citations74
US6555465B2Apr 29, 2003

Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring

YAMAHA CORP9 citations74
US5629557AMay 13, 1997

Semiconductor device capable of preventing humidity invasion

YAMAHA CORP11 citations74
US6080652AJun 27, 2000

Method of fabricating a semiconductor device having a multi-layered wiring

YAMAHA CORP12 citations73
US5997754ADec 7, 1999

Method of fabricating multi-layered wiring

YAMAHA CORP7 citations73
US5998814ADec 7, 1999

Semiconductor device and fabrication method thereof

YAMAHA CORP12 citations73
US5904576AMay 18, 1999

Method of forming wiring structure

YAMAHA CORP10 citations73
US5821162AOct 13, 1998

Method of forming multi-layer wiring utilizing SOG

YAMAHA CORP16 citations73
US5793110AAug 11, 1998

MOS transistor with good hot carrier resistance and low interface state density

YAMAHA CORP15 citations73
US5716869AFeb 10, 1998

Method of forming a wiring layer of a semiconductor device using reflow process

YAMAHA CORP10 citations73
US5705429AJan 6, 1998

Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius

YAMAHA CORP11 citations73
US5641993AJun 24, 1997

Semiconductor IC with multilayered Al wiring

YAMAHA CORP14 citations73
US5428251AJun 27, 1995

Multi-layer wiring structure having continuous grain boundaries

YAMAHA CORP14 citations73
US6150720ANov 21, 2000

Semiconductor device having manufacturing wiring structure with buried plugs

YAMAHA CORP12 citations72
US6146998ANov 14, 2000

Method of manufacturing wiring structure having buried plugs in semiconductor device, and semiconductor device

YAMAHA CORP13 citations72
US5786625AJul 28, 1998

Moisture resistant semiconductor device

YAMAHA CORP6 citations63
US6251805B1Jun 26, 2001

Method of fabricating semiconductor device

YAMAHA CORP2 citations62
US6060390AMay 9, 2000

Method of forming wiring layer

YAMAHA CORP6 citations62
US6541373B2Apr 1, 2003

Manufacture method for semiconductor with small variation in MOS threshold voltage

YAMAHA CORP0 citations52

YAMAHA CORPOATION

1 patent

YAGI RYOTARO

1 patent

NAKAO YUICHI

1 patent

ROHM CO LTD

1 patent

NAKAGAWA RYOSUKE

1 patent