P

Inventor

NAGEL NICOLAS

JP39 patents
⚠️ This page may combine multiple inventors who share the name “NAGEL NICOLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

23 patents
US6358855B1Mar 19, 2002

Clean method for recessed conductive barriers

INFINEON TECHNOLOGIES AG24 citations92
US6787831B2Sep 7, 2004

Barrier stack with improved barrier properties

INFINEON TECHNOLOGIES AG15 citations91
US6573542B2Jun 3, 2003

Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layer

INFINEON TECHNOLOGIES AG18 citations83
US7662721B2Feb 16, 2010

Hard mask layer stack and a method of patterning

INFINEON TECHNOLOGIES AG17 citations79
US7041551B2May 9, 2006

Device and a method for forming a capacitor device

INFINEON TECHNOLOGIES AG9 citations73
US6858492B2Feb 22, 2005

Method for fabricating a semiconductor memory device

INFINEON TECHNOLOGIES AG8 citations73
US6794705B2Sep 21, 2004

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials

INFINEON TECHNOLOGIES AG10 citations73
US6773986B2Aug 10, 2004

Method for fabricating a semiconductor memory device

INFINEON TECHNOLOGIES AG10 citations73
US6815234B2Nov 9, 2004

Reducing stress in integrated circuits

INFINEON TECHNOLOGIES AG8 citations70
US7521351B2Apr 21, 2009

Method for forming a semiconductor product and semiconductor product

INFINEON TECHNOLOGIES AG4 citations62
US7320934B2Jan 22, 2008

Method of forming a contact in a flash memory device

INFINEON TECHNOLOGIES AG2 citations62
US7319270B2Jan 15, 2008

Multi-layer electrode and method of forming the same

INFINEON TECHNOLOGIES AG4 citations62
US7199002B2Apr 3, 2007

Process for fabrication of a ferroelectric capacitor

INFINEON TECHNOLOGIES AG5 citations62
US7042037B1May 9, 2006

Semiconductor device

INFINEON TECHNOLOGIES AG2 citations62
US6940111B2Sep 6, 2005

Radiation protection in integrated circuits

INFINEON TECHNOLOGIES AG5 citations62
US6839220B1Jan 4, 2005

Multi-layer barrier allowing recovery anneal for ferroelectric capacitors

INFINEON TECHNOLOGIES AG2 citations62
US6614642B1Sep 2, 2003

Capacitor over plug structure

INFINEON TECHNOLOGIES AG3 citations61
US7378700B2May 27, 2008

Self-aligned V0-contact for cell size reduction

INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006

Self-aligned V0-contact for cell size reduction

INFINEON TECHNOLOGIES AG1 citations51
US6704219B2Mar 9, 2004

FeRAM memory and method for manufacturing it

INFINEON TECHNOLOGIES AG1 citations51
US6621683B1Sep 16, 2003

Memory cells with improved reliability

INFINEON TECHNOLOGIES AG1 citations51
US7416976B2Aug 26, 2008

Method of forming contacts using auxiliary structures

INFINEON TECHNOLOGIES AG1 citations45
US6818503B2Nov 16, 2004

Method for fabricating a semiconductor memory device

INFINEON TECHNOLOGIES AG0 citations41

QIMONDA AG

8 patents

SONY CORP

3 patents

TOSHIBA KK

2 patents

(unassigned)

1 patent

IBM

1 patent

INFINEON AG

1 patent