Inventor
NAGEL NICOLAS
JP39 patents
⚠️ This page may combine multiple inventors who share the name “NAGEL NICOLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
23 patentsUS6358855B1Mar 19, 2002
Clean method for recessed conductive barriers
INFINEON TECHNOLOGIES AG24 citations92
US6787831B2Sep 7, 2004
Barrier stack with improved barrier properties
INFINEON TECHNOLOGIES AG15 citations91
US6573542B2Jun 3, 2003
Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layer
INFINEON TECHNOLOGIES AG18 citations83
US7662721B2Feb 16, 2010
Hard mask layer stack and a method of patterning
INFINEON TECHNOLOGIES AG17 citations79
US7041551B2May 9, 2006
Device and a method for forming a capacitor device
INFINEON TECHNOLOGIES AG9 citations73
US6858492B2Feb 22, 2005
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG8 citations73
US6794705B2Sep 21, 2004
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
INFINEON TECHNOLOGIES AG10 citations73
US6773986B2Aug 10, 2004
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG10 citations73
US6815234B2Nov 9, 2004
Reducing stress in integrated circuits
INFINEON TECHNOLOGIES AG8 citations70
US7521351B2Apr 21, 2009
Method for forming a semiconductor product and semiconductor product
INFINEON TECHNOLOGIES AG4 citations62
US7320934B2Jan 22, 2008
Method of forming a contact in a flash memory device
INFINEON TECHNOLOGIES AG2 citations62
US7319270B2Jan 15, 2008
Multi-layer electrode and method of forming the same
INFINEON TECHNOLOGIES AG4 citations62
US7199002B2Apr 3, 2007
Process for fabrication of a ferroelectric capacitor
INFINEON TECHNOLOGIES AG5 citations62
US7042037B1May 9, 2006
Semiconductor device
INFINEON TECHNOLOGIES AG2 citations62
US6940111B2Sep 6, 2005
Radiation protection in integrated circuits
INFINEON TECHNOLOGIES AG5 citations62
US6839220B1Jan 4, 2005
Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
INFINEON TECHNOLOGIES AG2 citations62
US6614642B1Sep 2, 2003
Capacitor over plug structure
INFINEON TECHNOLOGIES AG3 citations61
US7378700B2May 27, 2008
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US6704219B2Mar 9, 2004
FeRAM memory and method for manufacturing it
INFINEON TECHNOLOGIES AG1 citations51
US6621683B1Sep 16, 2003
Memory cells with improved reliability
INFINEON TECHNOLOGIES AG1 citations51
US7416976B2Aug 26, 2008
Method of forming contacts using auxiliary structures
INFINEON TECHNOLOGIES AG1 citations45
US6818503B2Nov 16, 2004
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG0 citations41
QIMONDA AG
8 patentsUS7790516B2Sep 7, 2010
Method of manufacturing at least one semiconductor component and memory cells
QIMONDA AG29 citations93
US7714377B2May 11, 2010
Integrated circuits and methods of manufacturing thereof
QIMONDA AG19 citations92
US7778073B2Aug 17, 2010
Integrated circuit having NAND memory cell strings
QIMONDA AG9 citations84
US7462038B2Dec 9, 2008
Interconnection structure and method of manufacturing the same
QIMONDA AG18 citations83
US7838921B2Nov 23, 2010
Memory cell arrangements
QIMONDA AG5 citations63
US7577010B2Aug 18, 2009
Integrated circuits, methods for manufacturing integrated circuits, integrated memory arrays
QIMONDA AG2 citations63
US8009477B2Aug 30, 2011
Integrated circuit and method of forming an integrated circuit
QIMONDA AG2 citations61
US7935608B2May 3, 2011
Storage cell having a T-shaped gate electrode and method for manufacturing the same
QIMONDA AG4 citations61
SONY CORP
3 patentsUS5994153ANov 30, 1999
Fabrication process of a capacitor structure of semiconductor memory cell
SONY CORP51 citations96
US5864153AJan 26, 1999
Capacitor structure of semiconductor memory cell and fabrication process thereof
SONY CORP46 citations96
US6011284AJan 4, 2000
Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
SONY CORP33 citations93