Inventor
ROSSMAN KENT
US22 patents
Patents
22 patentsUS6846742B2Jan 25, 2005
Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
APPLIED MATERIALS INC486 citations99
US6843858B2Jan 18, 2005
Method of cleaning a semiconductor processing chamber
APPLIED MATERIALS INC317 citations99
US6589868B2Jul 8, 2003
Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
APPLIED MATERIALS INC597 citations99
US6559026B1May 6, 2003
Trench fill with HDP-CVD process including coupled high power density plasma deposition
APPLIED MATERIALS INC623 citations99
US6194038B1Feb 27, 2001
Method for deposition of a conformal layer on a substrate
APPLIED MATERIALS INC358 citations99
US6121161ASep 19, 2000
Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
APPLIED MATERIALS INC119 citations98
US6077357AJun 20, 2000
Orientless wafer processing on an electrostatic chuck
APPLIED MATERIALS INC105 citations98
US6704913B2Mar 9, 2004
In situ wafer heat for reduced backside contamination
APPLIED MATERIALS INC52 citations96
US5748434AMay 5, 1998
Shield for an electrostatic chuck
APPLIED MATERIALS INC91 citations96
US5976993ANov 2, 1999
Method for reducing the intrinsic stress of high density plasma films
APPLIED MATERIALS INC53 citations95
US7159597B2Jan 9, 2007
Multistep remote plasma clean process
APPLIED MATERIALS INC19 citations92
US6821577B2Nov 23, 2004
Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
APPLIED MATERIALS INC14 citations92
US6527910B2Mar 4, 2003
Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
APPLIED MATERIALS INC26 citations92
US6514870B2Feb 4, 2003
In situ wafer heat for reduced backside contamination
APPLIED MATERIALS INC15 citations92
US6458722B1Oct 1, 2002
Controlled method of silicon-rich oxide deposition using HDP-CVD
APPLIED MATERIALS INC23 citations92
US5811356ASep 22, 1998
Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning
APPLIED MATERIALS INC48 citations92
US6696362B2Feb 24, 2004
Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
APPLIED MATERIALS INC32 citations89
US7455893B2Nov 25, 2008
Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
APPLIED MATERIALS INC6 citations74
US7132134B2Nov 7, 2006
Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
APPLIED MATERIALS INC9 citations74
US7294205B1Nov 13, 2007
Method for reducing the intrinsic stress of high density plasma films
APPLIED MATERIALS INC8 citations72
US6559052B2May 6, 2003
Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
APPLIED MATERIALS INC10 citations70
US6524969B2Feb 25, 2003
High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
APPLIED MATERIALS INC1 citations48