P

Inventor

SHIEH HAU-TAI

TW77 patents
⚠️ This page may combine multiple inventors who share the name “SHIEH HAU-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

43 patents
US10878934B2Dec 29, 2020

Memory device and electronic device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10651832B2May 12, 2020

Level shifter

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11057025B2Jul 6, 2021

Level shifter

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10878890B1Dec 29, 2020

Operation assist circuit, memory device and operation assist method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US10354719B2Jul 16, 2019

3D structure for advanced SRAM design to avoid half-selected issue

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941287B2Apr 10, 2018

Three-dimensional static random access memory device structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9875789B2Jan 23, 2018

3D structure for advanced SRAM design to avoid half-selected issue

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9654146B2May 16, 2017

Bi-directional parity bit generator circuit

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9583181B1Feb 28, 2017

SRAM device capable of working in multiple low voltages without loss of performance

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9558791B2Jan 31, 2017

Three-dimensional static random access memory device structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915743B2Feb 27, 2024

Latch circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11264081B1Mar 1, 2022

Memory circuit, electronic device having the memory circuit, and method of operating memory circuit

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10950296B2Mar 16, 2021

Latch circuit formed from bit cell

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10510401B2Dec 17, 2019

Semiconductor memory device using shared data line for read/write operation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11423962B1Aug 23, 2022

Bit line pre-charge circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12400708B2Aug 26, 2025

Memory device and method for reducing active power consumption thereof using address control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12354647B2Jul 8, 2025

Memory device sense amplifier control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12347483B2Jul 1, 2025

Arrangements of memory devices and methods of operating the memory devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12300605B2May 13, 2025

Reducing internal node loading in combination circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12254919B2Mar 18, 2025

Sub-word line driver placement for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11929109B2Mar 12, 2024

Sub-word line driver placement for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854970B2Dec 26, 2023

Reducing internal node loading in combination circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11817144B2Nov 14, 2023

Arrangements of memory devices and methods of operating the memory devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11670362B2Jun 6, 2023

Sub-word line driver placement for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11450605B2Sep 20, 2022

Reducing internal node loading in combination circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11444608B2Sep 13, 2022

Level shifter

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11361812B2Jun 14, 2022

Sub-word line driver placement for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12400723B2Aug 26, 2025

Latch type sense amplifier for testing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12322438B2Jun 3, 2025

Latch circuit formed by modified memory cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249391B2Mar 11, 2025

Latch type sense amplifier

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183428B2Dec 31, 2024

Memory circuit and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068018B2Aug 20, 2024

Power mode wake-up for memory on different power domains

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11989498B2May 21, 2024

FinFET semiconductor device grouping

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11869623B2Jan 9, 2024

Latch type sense amplifier

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11763873B2Sep 19, 2023

Power mode wake-up for memory on different power domains

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715505B2Aug 1, 2023

Memory circuit and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11568121B2Jan 31, 2023

FinFET semiconductor device grouping

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11468929B2Oct 11, 2022

Memory circuit and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11361810B2Jun 14, 2022

Power mode wake-up for memory on different power domains

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11302701B2Apr 12, 2022

Three-dimensional static random access memory device structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11120868B2Sep 14, 2021

Semiconductor memory device using shared data line for read/write operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12412605B2Sep 9, 2025

Bit line pre-charge circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11682453B2Jun 20, 2023

Word line pulse width control circuit in static random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

TAIWAN SEMICONDUCTOR MFG

5 patents

CHEN YI-TZU

1 patent

SHIEH HAU-TAI

1 patent

Showing the top 50 of 77 patents by PatentIndex Score.