Inventor
LIBERA GIOVANNA DALLA
IT16 patents
Patents
16 patentsUS6351008B1Feb 26, 2002
Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions
ST MICROELECTRONICS SRL17 citations92
US6350652B1Feb 26, 2002
Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions
ST MICROELECTRONICS SRL55 citations92
US6281077B1Aug 28, 2001
Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions
ST MICROELECTRONICS SRL27 citations92
US6251728B1Jun 26, 2001
Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctions
ST MICROELECTRONICS SRL17 citations92
US6221717B1Apr 24, 2001
EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing process
ST MICROELECTRONICS SRL31 citations92
US6420769B2Jul 16, 2002
Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctions
ST MICROELECTRONICS SRL13 citations73
US6380034B1Apr 30, 2002
Process for manufacturing memory cells with dimensional control of the floating gate regions
ST MICROELECTRONICS SRL8 citations73
US6274411B1Aug 14, 2001
Method for manufacturing electronic devices, comprising non-salicided non-volatile memory cells, non-salicided HV transistors, and LV transistors with salicided junctions with few masks
ST MICROELECTRONICS SRL14 citations73
US6414349B1Jul 2, 2002
High efficiency memory device
ST MICROELECTRONICS SRL2 citations62
US6396101B2May 28, 2002
Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions
ST MICROELECTRONICS SRL2 citations62
US6340828B1Jan 22, 2002
Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions
ST MICROELECTRONICS SRL2 citations62
US6329254B1Dec 11, 2001
Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method
ST MICROELECTRONICS SRL6 citations62
US6548354B2Apr 15, 2003
Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved information
ST MICROELECTRONICS SRL1 citations51
US6437395B2Aug 20, 2002
Process for the manufacturing of an electrically programmable non-volatile memory device
ST MICROELECTRONICS SRL1 citations51
US6240011B1May 29, 2001
Eeprom cell with improved current performance
ST MICROELECTRONICS SRL1 citations51
US6642582B1Nov 4, 2003
Circuit structure with a parasitic transistor having high threshold voltage
ST MICROELECTRONICS SRL0 citations41