Inventor
LEUNG CHUNG WAI
US22 patents
⚠️ This page may combine multiple inventors who share the name “LEUNG CHUNG WAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOSEL VITELIC INC
8 patentsUS6355524B1Mar 12, 2002
Nonvolatile memory structures and fabrication methods
MOSEL VITELIC INC193 citations97
US6570215B2May 27, 2003
Nonvolatile memories with floating gate spacers, and methods of fabrication
MOSEL VITELIC INC17 citations92
US6566196B1May 20, 2003
Sidewall protection in fabrication of integrated circuits
MOSEL VITELIC INC51 citations92
US6562681B2May 13, 2003
Nonvolatile memories with floating gate spacers, and methods of fabrication
MOSEL VITELIC INC38 citations92
US6559055B2May 6, 2003
Dummy structures that protect circuit elements during polishing
MOSEL VITELIC INC26 citations91
US6821847B2Nov 23, 2004
Nonvolatile memory structures and fabrication methods
MOSEL VITELIC INC7 citations74
US6815760B2Nov 9, 2004
Nonvolatile memory structures and fabrication methods
MOSEL VITELIC INC10 citations74
US6700143B2Mar 2, 2004
Dummy structures that protect circuit elements during polishing
MOSEL VITELIC INC9 citations72
AGERE SYSTEMS INC
4 patentsUS6555871B1Apr 29, 2003
Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor
AGERE SYSTEMS INC0 citations52
US6657281B1Dec 2, 2003
Bipolar transistor with a low K material in emitter base spacer regions
AGERE SYSTEMS INC0 citations51
US6815302B2Nov 9, 2004
Method of making a bipolar transistor with an oxygen implanted emitter window
AGERE SYSTEMS INC0 citations49
US6537887B2Mar 25, 2003
Integrated circuit fabrication
AGERE SYSTEMS INC0 citations47
AGERE SYST GUARDIAN CORP
3 patentsUS6313500B1Nov 6, 2001
Split gate memory cell
AGERE SYST GUARDIAN CORP21 citations92
US6222764B1Apr 24, 2001
Erasable memory device and an associated method for erasing a memory cell therein
AGERE SYST GUARDIAN CORP42 citations92
US6451660B1Sep 17, 2002
Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water
AGERE SYST GUARDIAN CORP18 citations90
LUCENT TECHNOLOGIES INC
3 patentsUS6168995B1Jan 2, 2001
Method of fabricating a split gate memory cell
LUCENT TECHNOLOGIES INC27 citations92
US5851870ADec 22, 1998
Method for making a capacitor
LUCENT TECHNOLOGIES INC31 citations89
US5843827ADec 1, 1998
Method of reducing dielectric damage from plasma etch charging
LUCENT TECHNOLOGIES INC8 citations72
PROMOS TECHNOLOGIES INC
3 patentsUS7910429B2Mar 22, 2011
Method of forming ONO-type sidewall with reduced bird's beak
PROMOS TECHNOLOGIES INC28 citations91
US6962848B2Nov 8, 2005
Nonvolatile memory structures and fabrication methods
PROMOS TECHNOLOGIES INC4 citations63
US7511333B2Mar 31, 2009
Nonvolatile memory cell with multiple floating gates and a connection region in the channel
PROMOS TECHNOLOGIES INC1 citations50