Inventor

ICHIGE MASAYUKI

JP47 patents

⚠️ This page may combine multiple inventors who share the name “ICHIGE MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ICHIGE MASAYUKI

TOSHIBA KK

Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems

Nonvolatile semiconductor memory

Semiconductor device

Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors

Semiconductor device and manufacturing method

Non-volatile semiconductor memory device with multi-layer gate structure

Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems

Semiconductor integrated circuit device

Non-volatile semiconductor memory device with multi-layer gate structure

Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode

Semiconductor device and method of manufacturing the same

Flash memory having memory section and peripheral circuit section

Fabrication method of a nonvolatile semiconductor memory

Manufacturing method of semiconductor device with filling insulating film into trench

Non-volatile memory device and method for manufacturing same

Nonvolatile semiconductor memory device

Method for manufacturing semiconductor device

Semiconductor integrated circuit device

Semiconductor memory device and electric device with the same

Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same

Capacitor element with an opening portion formed in a peripheral circuit

Nonvolatile semiconductor memory

Nonvolatile semicondutor memory with metallic silicide film electrically connected to a control gate electrode layer

Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same

Semiconductor memory

Flash memory having memory section and peripheral circuit section

Flash memory having memory section and peripheral circuit section

Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same

Manufacturing method of semiconductor device with filling insulating film into trench

EEPROM array with well contacts

Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)

Nonvolatile semiconductor memory device

Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same

Semiconductor device with a selection gate and a peripheral gate

Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same

Nonvolatile semiconductor memory device

EEPROM array with well contacts

Semiconductor memory

SUGIMAE KIKUKO

Semiconductor memory

Nonvolatile semiconductor memory and fabrication method for the same

Nonvolatile semiconductor memory and fabrication method for the same

Semiconductor memory

ICHIGE MASAYUKI

Nonvolatile semiconductor memory

Nonvolatile semiconductor memory

SANDISK CORP

Fabrication of semiconductor device for flash memory with increased select gate width

KABSUHIKI KAISHA TOSHIBA

Electrically rewritable non-volatile semiconductor memory device

KATO YOSHIKO

Semiconductor memory device