Inventor

ZENG JUN

US229 patents

⚠️ This page may combine multiple inventors who share the name “ZENG JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZENG JUN

FAIRCHILD SEMICONDUCTOR

Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge

MOS-gated device having a buried gate and process for forming same

Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique

Low voltage high density trench-gated power device with uniformity doped channel and its edge termination technique

Power MOSFET and method for forming same using a self-aligned body implant

MOS-gated device having a buried gate and process for forming same

Power MOS device with buried gate

Power trench transistor device source region formation using silicon spacer

Power MOS device with buried gate and groove

Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device

Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge

Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate

MAXPOWER SEMICONDUCTOR INC

Vertical power MOSFET with planar channel and vertical field plate

Trench transistors and methods with low-voltage-drop shunt to body diode

Power MOSFET and its edge termination

Super self-aligned trench MOSFET devices, methods, and systems

Methods of operating power semiconductor devices and structures

Trench gated power device with multiple trench width and its fabrication process

MOS-gated power devices, methods, and integrated circuits

Trench device structure and fabrication

Edge termination with improved breakdown voltage

Power MOSFET having planar channel, vertical current path, and top drain electrode

Vertical power MOSFET having planar channel and its method of fabrication

Vertical power MOSFET having planar channel and its method of fabrication

DARWISH MOHAMED N

Schottky and MOSFET+Schottky structures, devices, and methods

Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield

Power semiconductor devices, structures, and related methods

Power MOSFET with embedded recessed field plate and methods of fabrication

Devices, components and methods combining trench field plates with immobile electrostatic charge

MOSFET switch with embedded electrostatic charge

ZENG JUN

Semiconductor device structures and related processes

Power device structures and methods using empty space zones

Trench gated power device with multiple trench width and its fabrication process

Semiconductor device structures and related processes

Power device structures and methods

INTERSIL CORP

High density MOS-gated power device and process for forming same

Semiconductor device having reduced effective substrate resistivity and associated methods

Power trench transistor device source region formation using silicon spacer

Methods of forming power semiconductor devices having merged split-well body regions therein

Edge termination for silicon power devices

HEWLETT PACKARD DEVELOPMENT CO

Generating data for a three-dimensional (3D) printable object, including a truss structure

Generating slice data from a voxel representation

Rules for printing three-dimensional parts

BURNS CHRISTOPHER JOHN

Phenyl amino pyrimidine compounds and uses thereof

WINNERS SUN PLASTIC & ELECTRONIC SHENZHEN CO LTD

Tripod

EMC CORP

Managing data relocation in storage systems

INTERSIL INC

Edge termination for silicon power devices

TRANSMIT TECHNOLOGIETRANSFER

Method for making shaped structures with internally coated cavities

Shapellx Us Inc

Body shaping garment

SOBEK DANIEL

Microfluidic liquid stream configuration system