Inventor

DARWISH MOHAMED N

US118 patents

⚠️ This page may combine multiple inventors who share the name “DARWISH MOHAMED N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DARWISH MOHAMED N

SILICONIX INC

Trench MOSFET having improved breakdown and on-resistance characteristics

Trench MOSFET with multi-resistivity drain to provide low on-resistance

Trench-gated power MOSFET with protective diode

Termination for trench MIS device

Trench MIS device with thick oxide layer in bottom of gate contact trench

Trench MOSFET with heavily doped delta layer to provide low on- resistance

Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer

Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same

Termination for trench MIS device having implanted drain-drift region

Method for making trench mosfet having implanted drain-drift region

Trench MOSFET having implanted drain-drift region

Process for manufacturing trench gated MOSFET having drain/drift region

Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance

Termination for trench MIS device having implanted drain-drift region

Method for making trench MIS device with reduced gate-to-drain capacitance

Trench MIS device with graduated gate oxide layer

Trench MIS device with reduced gate-to-drain capacitance

Method of fabricating trench MIS device with graduated gate oxide layer

High density trench-gated power MOSFET

Trench MIS device having implanted drain-drift region and thick bottom oxide

Self-aligned differential oxidation in trenches by ion implantation

Thicker oxide formation at the trench bottom by selective oxide deposition

MAXPOWER SEMICONDUCTOR INC

Power MOS transistor incorporating fixed charges that balance the charge in the drift region

Vertical power MOSFET with planar channel and vertical field plate

Power MOSFET with recessed field plate

Trench transistors and methods with low-voltage-drop shunt to body diode

Power MOSFET and its edge termination

Semiconductor device

Super self-aligned trench MOSFET devices, methods, and systems

Methods of operating power semiconductor devices and structures

Trench gated power device with multiple trench width and its fabrication process

MOS-gated power devices, methods, and integrated circuits

Edge termination with improved breakdown voltage

DARWISH MOHAMED N

Schottky and MOSFET+Schottky structures, devices, and methods

Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield

Method of manufacture for a semiconductor device

Power semiconductor devices, structures, and related methods

Semiconductor device

Semiconductor device

Power MOSFET with embedded recessed field plate and methods of fabrication

Devices, components and methods combining trench field plates with immobile electrostatic charge

MOSFET switch with embedded electrostatic charge

ZENG JUN

Semiconductor device structures and related processes

Power device structures and methods using empty space zones

Trench gated power device with multiple trench width and its fabrication process

Semiconductor device structures and related processes

Power device structures and methods

AT & T BELL LAB

Lateral MOS controlled thyristor

NAT SEMICONDUCTOR CORP

Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor

VISHAY SILICONIX

Current limiting technique for hybrid power MOSFET circuits