Inventor
KO KING WAI KELWIN
US13 patents
⚠️ This page may combine multiple inventors who share the name “KO KING WAI KELWIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
9 patentsUS6489253B1Dec 3, 2002
Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
ADVANCED MICRO DEVICES INC6 citations73
US6333263B1Dec 25, 2001
Method of reducing stress corrosion induced voiding of patterned metal layers
ADVANCED MICRO DEVICES INC7 citations73
US6130169AOct 10, 2000
Efficient in-situ resist strip process for heavy polymer metal etch
ADVANCED MICRO DEVICES INC14 citations68
US6445051B1Sep 3, 2002
Method and system for providing contacts with greater tolerance for misalignment in a flash memory
ADVANCED MICRO DEVICES INC3 citations63
US6472327B2Oct 29, 2002
Method and system for etching tunnel oxide to reduce undercutting during memory array fabrication
ADVANCED MICRO DEVICES INC6 citations62
US6448594B1Sep 10, 2002
Method and system for processing a semiconductor device
ADVANCED MICRO DEVICES INC3 citations62
US6251776B1Jun 26, 2001
Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers
ADVANCED MICRO DEVICES INC4 citations62
US6627973B1Sep 30, 2003
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device
ADVANCED MICRO DEVICES INC0 citations52
US6603211B2Aug 5, 2003
Method and system for providing a robust alignment mark at thin oxide layers
ADVANCED MICRO DEVICES INC0 citations51
CHANG MARK S
3 patentsUS8507969B2Aug 13, 2013
Method and system for providing contact to a first polysilicon layer in a flash memory device
CHANG MARK S0 citations49
US8329530B1Dec 11, 2012
Method and system for providing contact to a first polysilicon layer in a flash memory device
CHANG MARK S0 citations49
US8183619B1May 22, 2012
Method and system for providing contact to a first polysilicon layer in a flash memory device
CHANG MARK S0 citations49