Inventor
BLANCHARD RICHARD A
US300 patents
⚠️ This page may combine multiple inventors who share the name “BLANCHARD RICHARD A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICONIX INC
13 patentsUS5576245ANov 19, 1996
Method of making vertical current flow field effect transistor
SILICONIX INC109 citations99
US5485027AJan 16, 1996
Isolated DMOS IC technology
SILICONIX INC222 citations99
US5298781AMar 29, 1994
Vertical current flow field effect transistor with thick insulator over non-channel areas
SILICONIX INC144 citations99
US5164325ANov 17, 1992
Method of making a vertical current flow field effect transistor
SILICONIX INC144 citations99
US5156989AOct 20, 1992
Complementary, isolated DMOS IC technology
SILICONIX INC405 citations99
US4914058AApr 3, 1990
Grooved DMOS process with varying gate dielectric thickness
SILICONIX INC352 citations99
US4893160AJan 9, 1990
Method for increasing the performance of trenched devices and the resulting structure
SILICONIX INC423 citations99
US4767722AAug 30, 1988
Method for making planar vertical channel DMOS structures
SILICONIX INC210 citations99
US4983535AJan 8, 1991
Vertical DMOS transistor fabrication process
SILICONIX INC77 citations96
US4791462ADec 13, 1988
Dense vertical j-MOS transistor
SILICONIX INC60 citations96
US4774196ASep 27, 1988
Method of bonding semiconductor wafers
SILICONIX INC57 citations96
US4682405AJul 28, 1987
Methods for forming lateral and vertical DMOS transistors
SILICONIX INC56 citations96
US5218228AJun 8, 1993
High voltage MOS transistors with reduced parasitic current gain
SILICONIX INC62 citations95
IDEAL POWER INC
9 patentsUS9054706B2Jun 9, 2015
Systems, circuits, devices, and methods with bidirectional bipolar transistors
IDEAL POWER INC20 citations96
US9029909B2May 12, 2015
Systems, circuits, devices, and methods with bidirectional bipolar transistors
IDEAL POWER INC20 citations96
US9355853B2May 31, 2016
Systems and methods for bidirectional device fabrication
IDEAL POWER INC27 citations94
US9647553B2May 9, 2017
Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
IDEAL POWER INC17 citations93
US9374084B2Jun 21, 2016
Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on
IDEAL POWER INC10 citations93
US9374085B2Jun 21, 2016
Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
IDEAL POWER INC10 citations93
US9369125B2Jun 14, 2016
Bidirectional two-base bipolar junction transistor operation, circuits, and systems with collector-side base driven
IDEAL POWER INC12 citations93
US9356595B2May 31, 2016
Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with collector-side base driven, diode-mode turn-on, double base short at initial turn-off, and two base junctions clamped by default
IDEAL POWER INC14 citations93
US9337262B2May 10, 2016
Structures and methods with reduced sensitivity to surface charge
IDEAL POWER INC20 citations93
GEN SEMICONDUCTOR INC
6 patentsUS6621107B2Sep 16, 2003
Trench DMOS transistor with embedded trench schottky rectifier
GEN SEMICONDUCTOR INC179 citations99
US6686244B2Feb 3, 2004
Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
GEN SEMICONDUCTOR INC94 citations98
US6479352B2Nov 12, 2002
Method of fabricating high voltage power MOSFET having low on-resistance
GEN SEMICONDUCTOR INC126 citations98
US6465304B1Oct 15, 2002
Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
GEN SEMICONDUCTOR INC105 citations97
US6576516B1Jun 10, 2003
High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
GEN SEMICONDUCTOR INC70 citations96
US6566201B1May 20, 2003
Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
GEN SEMICONDUCTOR INC71 citations96
SUPERTEX INC
3 patentsUS4345265AAug 17, 1982
MOS Power transistor with improved high-voltage capability
SUPERTEX INC183 citations99
US4145703AMar 20, 1979
High power MOS device and fabrication method therefor
SUPERTEX INC135 citations96
US4344081AAug 10, 1982
Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
SUPERTEX INC159 citations95
MEARS TECHNOLOGIES INC
3 patentsUS7586165B2Sep 8, 2009
Microelectromechanical systems (MEMS) device including a superlattice
MEARS TECHNOLOGIES INC111 citations98
US7531829B2May 12, 2009
Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
MEARS TECHNOLOGIES INC114 citations98
US7531850B2May 12, 2009
Semiconductor device including a memory cell with a negative differential resistance (NDR) device
MEARS TECHNOLOGIES INC111 citations98
ST MICROELECTRONICS INC
2 patentsLOWENTHAL MARK D
2 patentsRAY WILLIAM JOHNSTONE
2 patents(unassigned)
2 patentsSGS THOMSON MICROELECTRONICS
1 patentLOWENTHAL MARK DAVID
1 patentDARWISH MOHAMED N
1 patentZENG JUN
1 patentRJ MEARS LLC
1 patentTHIRD DIMENSION 3D SC INC
1 patentNTHDEGREE TECH WORLDWIDE INC
1 patentTHIRD DIMENSION SEMICONDUCTOR
1 patentShowing the top 50 of 300 patents by PatentIndex Score.