Inventor

METZ MATTHEW

US68 patents

⚠️ This page may combine multiple inventors who share the name “METZ MATTHEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

METZ MATTHEW

INTEL CORP

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Reducing gate dielectric material to form a metal gate electrode extension

Subtractively patterned interconnect structures for integrated circuits

Group III-N nanowire transistors

Group III-N nanowire transistors

CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture

Group III-N nanowire transistors

Defect transferred and lattice mismatched epitaxial film

Epitaxial film on nanoscale structure

Reducing reactions between polysilicon gate electrodes and high dielectric constant gate dielectrics

Vertical tunneling field-effect transistors

Transistor structure with indium phosphide channel

Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)

Thin film transistors for memory cell array layer selection

CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture

CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture

High electron mobility transistor (HEMT) and method of fabrication

Group III-N nanowire transistors

High voltage field effect transistors

Subtractively patterned interconnect structures for integrated circuits

Thin film transistor structures with regrown source and drain

Vertical tunneling field-effect transistors

Channel formation for three dimensional transistors

Passivation layers for thin film transistors

Crystalline bottom electrode for perovskite capacitors and methods of fabrication

Passivation layers for thin film transistors and methods of fabrication

Vertical architecture of thin film transistors

Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)

Contact electrodes for vertical thin-film transistors

Epitaxial layers on contact electrodes for thin- film transistors

Subtractively patterned interconnect structures for integrated circuits

Transistors with monocrystalline metal chalcogenide channel materials

Transistor device with (anti)ferroelectric spacer structures

Contact stacks to reduce hydrogen in thin film transistor

Integrated circuit interconnect structures with graphene cap

Deposition tool and method for filling deep trenches

Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)

THEN HAN WUI

Group III-N nanowire transistors

High voltage field effect transistors

Non-planar III-N transistor

CHAU ROBERT S

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

AIR LIQUIDE

Adsorber

Adsorption based gas separation method

RADOSAVLJEVIC MARKO

CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture

DEWEY GILBERT

Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same