Inventor
ODE HIROYUKI
JP70 patents
⚠️ This page may combine multiple inventors who share the name “ODE HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
19 patentsUS8581318B1Nov 12, 2013
Enhanced non-noble electrode layers for DRAM capacitor cell
INTERMOLECULAR INC21 citations92
US9105646B2Aug 11, 2015
Methods for reproducible flash layer deposition
INTERMOLECULAR INC12 citations84
US9012298B2Apr 21, 2015
Methods for reproducible flash layer deposition
INTERMOLECULAR INC7 citations84
US8679939B2Mar 25, 2014
Manufacturable high-k DRAM MIM capacitor structure
INTERMOLECULAR INC6 citations84
US8546236B2Oct 1, 2013
High performance dielectric stack for DRAM capacitor
INTERMOLECULAR INC5 citations84
US8349696B1Jan 8, 2013
Asymmetric MIM capacitor for DRAM devices
INTERMOLECULAR INC9 citations84
US8815695B2Aug 26, 2014
Methods to improve leakage for ZrO2 based high K MIM capacitor
INTERMOLECULAR INC4 citations73
US8652927B2Feb 18, 2014
Integration of non-noble DRAM electrode
INTERMOLECULAR INC5 citations71
US8829647B2Sep 9, 2014
High temperature ALD process for metal oxide for DRAM applications
INTERMOLECULAR INC2 citations63
US8581319B2Nov 12, 2013
Semiconductor stacks including catalytic layers
INTERMOLECULAR INC4 citations63
US8574999B2Nov 5, 2013
Blocking layers for leakage current reduction in DRAM devices
INTERMOLECULAR INC2 citations63
US8569818B2Oct 29, 2013
Blocking layers for leakage current reduction in DRAM devices
INTERMOLECULAR INC1 citations63
US8541868B2Sep 24, 2013
Top electrode templating for DRAM capacitor
INTERMOLECULAR INC4 citations63
US8476141B2Jul 2, 2013
High performance dielectric stack for DRAM capacitor
INTERMOLECULAR INC3 citations63
US8836002B2Sep 16, 2014
Method for fabricating a DRAM capacitor
INTERMOLECULAR INC2 citations62
US8541283B2Sep 24, 2013
High performance dielectric stack for DRAM capacitor
INTERMOLECULAR INC3 citations62
US9224878B2Dec 29, 2015
High work function, manufacturable top electrode
INTERMOLECULAR INC2 citations60
US9178010B2Nov 3, 2015
Adsorption site blocking method for co-doping ALD films
INTERMOLECULAR INC1 citations52
US8975633B2Mar 10, 2015
Molybdenum oxide top electrode for DRAM capacitors
INTERMOLECULAR INC0 citations52
MALHOTRA SANDRA
6 patentsUS8440537B1May 14, 2013
Adsorption site blocking method for co-doping ALD films
MALHOTRA SANDRA6 citations84
US8765570B2Jul 1, 2014
Manufacturable high-k DRAM MIM capacitor structure
MALHOTRA SANDRA7 citations83
US8435854B1May 7, 2013
Top electrode templating for DRAM capacitor
MALHOTRA SANDRA11 citations83
US8415227B2Apr 9, 2013
High performance dielectric stack for DRAM capacitor
MALHOTRA SANDRA5 citations83
US8574998B2Nov 5, 2013
Leakage reduction in DRAM MIM capacitors
MALHOTRA SANDRA7 citations82
US8563392B2Oct 22, 2013
Method of forming an ALD material
MALHOTRA SANDRA2 citations62
KIOXIA CORP
6 patentsUS11889777B2Jan 30, 2024
Semiconductor memory device
KIOXIA CORP0 citations62
US11349073B2May 31, 2022
Semiconductor memory device
KIOXIA CORP0 citations62
US11856880B2Dec 26, 2023
Semiconductor storage device
KIOXIA CORP0 citations52
US11508906B2Nov 22, 2022
Semiconductor memory device
KIOXIA CORP0 citations52
US11387276B2Jul 12, 2022
Nonvolatile semiconductor storage device and method of manufacturing the same
KIOXIA CORP0 citations52
US11145590B2Oct 12, 2021
Semiconductor memory device and method of manufacturing the same
KIOXIA CORP0 citations52
CHEN HANHONG
4 patentsUS8815677B2Aug 26, 2014
Method of processing MIM capacitors to reduce leakage current
CHEN HANHONG5 citations73
US8647943B2Feb 11, 2014
Enhanced non-noble electrode layers for DRAM capacitor cell
CHEN HANHONG4 citations72
US8835273B2Sep 16, 2014
High temperature ALD process of metal oxide for DRAM applications
CHEN HANHONG3 citations62
US8772123B2Jul 8, 2014
Band gap improvement in DRAM capacitors
CHEN HANHONG2 citations62
TOSHIBA KK
4 patentsUS9721961B2Aug 1, 2017
Semiconductor memory device
TOSHIBA KK4 citations72
US9224788B2Dec 29, 2015
Nonvolatile memory device and method for manufacturing same
TOSHIBA KK3 citations61
US9559300B2Jan 31, 2017
Resistive random access memory device and manufacturing method thereof
TOSHIBA KK0 citations52
US9336880B2May 10, 2016
Nonvolatile memory device and method of controlling the same
TOSHIBA KK1 citations52
DEWEERD WIM
3 patentsUS8647960B2Feb 11, 2014
Anneal to minimize leakage current in DRAM capacitor
DEWEERD WIM11 citations83
US8722504B2May 13, 2014
Interfacial layer for DRAM capacitor
DEWEERD WIM6 citations72
US8853049B2Oct 7, 2014
Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices
DEWEERD WIM2 citations62
RAMANI KARTHIK
2 patentsELPIDA MEMORY INC
2 patentsRUI XIANGXIN
1 patentMALHOTRA SANDRA G
1 patentTOSHIBA MEMORY CORP
1 patentPS4 LUXCO SARL
1 patentShowing the top 50 of 70 patents by PatentIndex Score.