Inventor
JANGJIAN SHIU-KO
TW160 patents
⚠️ This page may combine multiple inventors who share the name “JANGJIAN SHIU-KO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
41 patentsUS9876114B2Jan 23, 2018
Structure and method for 3D FinFET metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9620610B1Apr 11, 2017
FinFET gate structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US9437484B2Sep 6, 2016
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US10367021B2Jul 30, 2019
Image sensor device and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US10998415B2May 4, 2021
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10192988B2Jan 29, 2019
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10090206B2Oct 2, 2018
FinFET gate structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10014224B2Jul 3, 2018
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9837306B2Dec 5, 2017
Interconnection structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9728646B2Aug 8, 2017
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9640456B2May 2, 2017
Support structure for integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9502538B2Nov 22, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9490365B2Nov 8, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10629708B2Apr 21, 2020
Semiconductor device structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10090242B2Oct 2, 2018
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9478581B2Oct 25, 2016
Grids in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9406675B1Aug 2, 2016
FinFET structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10340192B2Jul 2, 2019
FinFET gate structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10020401B2Jul 10, 2018
Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemes
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US9691766B1Jun 27, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations82
US9466494B2Oct 11, 2016
Selective growth for high-aspect ration metal fill
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US11551979B2Jan 10, 2023
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11522001B2Dec 6, 2022
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10854508B2Dec 1, 2020
Interconnection structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10818558B2Oct 27, 2020
Semiconductor structure having trench and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658252B2May 19, 2020
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522640B2Dec 31, 2019
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10510588B2Dec 17, 2019
Interconnection structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10340301B2Jul 2, 2019
Support structure for integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10332787B2Jun 25, 2019
Formation method of interconnection structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269664B2Apr 23, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10164073B2Dec 25, 2018
Apparatus and method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10037921B2Jul 31, 2018
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941376B2Apr 10, 2018
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9870995B2Jan 16, 2018
Formation of copper layer structure with self anneal strain improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9591242B2Mar 7, 2017
Black level control for image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9543234B2Jan 10, 2017
In-situ formation of silicon and tantalum containing barrier
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9490346B2Nov 8, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10886226B2Jan 5, 2021
Conductive contact having staircase barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10854713B2Dec 1, 2020
Method for forming trench structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9871100B2Jan 16, 2018
Trench structure of semiconductor device having uneven nitrogen distribution liner
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9337192B2May 10, 2016
Metal gate stack having TaAlCN layer
TAIWAN SEMICONDUCTOR MFG13 citations93
US9024369B2May 5, 2015
Metal shield structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG8 citations84
US9257476B2Feb 9, 2016
Grids in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG11 citations83
US8907385B2Dec 9, 2014
Surface treatment for BSI image sensors
TAIWAN SEMICONDUCTOR MFG7 citations83
US7207339B2Apr 24, 2007
Method for cleaning a plasma enhanced CVD chamber
TAIWAN SEMICONDUCTOR MFG7 citations74
US9397129B2Jul 19, 2016
Dielectric film for image sensor
TAIWAN SEMICONDUCTOR MFG3 citations73
US9337303B2May 10, 2016
Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer
TAIWAN SEMICONDUCTOR MFG6 citations73
JANGJIAN SHIU-KO
2 patentsShowing the top 50 of 160 patents by PatentIndex Score.