Inventor
LIN CHUN-CHE
TW48 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHUN-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS9876114B2Jan 23, 2018
Structure and method for 3D FinFET metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9437484B2Sep 6, 2016
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US10367021B2Jul 30, 2019
Image sensor device and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US10998415B2May 4, 2021
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10090242B2Oct 2, 2018
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9691766B1Jun 27, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations82
US9466494B2Oct 11, 2016
Selective growth for high-aspect ration metal fill
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US11522001B2Dec 6, 2022
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10658252B2May 19, 2020
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522640B2Dec 31, 2019
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269664B2Apr 23, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941376B2Apr 10, 2018
Metal gate scheme for device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10854713B2Dec 1, 2020
Method for forming trench structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9871100B2Jan 16, 2018
Trench structure of semiconductor device having uneven nitrogen distribution liner
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9722076B2Aug 1, 2017
Method for manufacturing semiconductor device with contamination improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11257953B2Feb 22, 2022
Selective growth for high-aspect ratio metal fill
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10797176B2Oct 6, 2020
Selective growth for high-aspect ratio metal fill
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US9478660B2Oct 25, 2016
Protection layer on fin of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12464786B2Nov 4, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272708B2Apr 8, 2025
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11219115B2Jan 4, 2022
EUV collector contamination prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004973B2May 11, 2021
Semiconductor device with contamination improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957545B2Mar 23, 2021
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10631392B2Apr 21, 2020
EUV collector contamination prevention
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11942419B2Mar 26, 2024
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404368B2Aug 2, 2022
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10861701B2Dec 8, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10818716B2Oct 27, 2020
Image sensor device and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9985133B2May 29, 2018
Protection layer on fin of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9824943B2Nov 21, 2017
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868063B2Dec 15, 2020
Surface treatment for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720386B2Jul 21, 2020
Etch stop layer in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10312366B2Jun 4, 2019
Semiconductor device with contamination improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10109741B2Oct 23, 2018
Selective growth for high-aspect ratio metal fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9978793B2May 22, 2018
Surface treatment for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9847296B2Dec 19, 2017
Barrier layer and structure method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
US9601535B2Mar 21, 2017
Semiconducator image sensor having color filters formed over a high-K dielectric grid
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38
LEXTAR ELECTRONICS CORP
3 patentsUS12297366B2May 13, 2025
Quantum dot oil-based ink and pattern recognition system
LEXTAR ELECTRONICS CORP0 citations58
US11879084B2Jan 23, 2024
Phosphate phosphor, light emitting device, and detecting device
LEXTAR ELECTRONICS CORP0 citations58
US10040994B2Aug 7, 2018
Phosphor, fabricating method thereof, and light-emitting device and backlight module employing the same
LEXTAR ELECTRONICS CORP1 citations47