Inventor
KO HSIANG-HSIANG
TW16 patents
⚠️ This page may combine multiple inventors who share the name “KO HSIANG-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9263275B2Feb 16, 2016
Interface for metal gate integration
TAIWAN SEMICONDUCTOR MFG6 citations68
US9105578B2Aug 11, 2015
Interface for metal gate integration
TAIWAN SEMICONDUCTOR MFG3 citations58
US9324863B2Apr 26, 2016
Semiconductor device
TAIWAN SEMICONDUCTOR MFG0 citations51
US9006070B2Apr 14, 2015
Two-step shallow trench isolation (STI) process
TAIWAN SEMICONDUCTOR MFG0 citations51
US8927406B2Jan 6, 2015
Dual damascene metal gate
TAIWAN SEMICONDUCTOR MFG0 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS9735271B2Aug 15, 2017
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9502280B2Nov 22, 2016
Two-step shallow trench isolation (STI) process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9698263B2Jul 4, 2017
Surface tension modification using silane with hydrophobic functional group for thin film deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9634119B2Apr 25, 2017
Semiconductor devices utilizing partially doped stressor film portions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations49