P

Inventor

KANG SEAN

US26 patents
⚠️ This page may combine multiple inventors who share the name “KANG SEAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

16 patents
US9478433B1Oct 25, 2016

Cyclic spacer etching process with improved profile control

APPLIED MATERIALS INC109 citations97
US10622214B2Apr 14, 2020

Tungsten defluorination by high pressure treatment

APPLIED MATERIALS INC15 citations94
US10847360B2Nov 24, 2020

High pressure treatment of silicon nitride film

APPLIED MATERIALS INC15 citations86
US10049927B2Aug 14, 2018

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

APPLIED MATERIALS INC14 citations84
US9520302B2Dec 13, 2016

Methods for controlling Fin recess loading

APPLIED MATERIALS INC3 citations73
US10424487B2Sep 24, 2019

Atomic layer etching processes

APPLIED MATERIALS INC3 citations72
US9721807B2Aug 1, 2017

Cyclic spacer etching process with improved profile control

APPLIED MATERIALS INC4 citations72
US11495470B1Nov 8, 2022

Method of enhancing etching selectivity using a pulsed plasma

APPLIED MATERIALS INC2 citations68
US12593627B2Mar 31, 2026

Tungsten defluorination by high pressure treatment

APPLIED MATERIALS INC0 citations62
US11705337B2Jul 18, 2023

Tungsten defluorination by high pressure treatment

APPLIED MATERIALS INC0 citations62
US9299577B2Mar 29, 2016

Methods for etching a dielectric barrier layer in a dual damascene structure

APPLIED MATERIALS INC2 citations62
US12278110B2Apr 15, 2025

Bias voltage modulation approach for SiO/SiN layer alternating etch process

APPLIED MATERIALS INC0 citations53
US10062575B2Aug 28, 2018

Poly directional etch by oxidation

APPLIED MATERIALS INC1 citations52
US9514953B2Dec 6, 2016

Methods for barrier layer removal

APPLIED MATERIALS INC1 citations52
US9368369B2Jun 14, 2016

Methods for forming a self-aligned contact via selective lateral etch

APPLIED MATERIALS INC1 citations52
US10242908B2Mar 26, 2019

Airgap formation with damage-free copper

APPLIED MATERIALS INC0 citations45

LAM RES CORP

5 patents

CHO SANGJUN

2 patents

MICROMATERIALS LLC

1 patent

DRYER ERIC

1 patent

HUANG YAO-HSIN

1 patent