P

Inventor

CHANG JUI-CHUN

TW38 patents
⚠️ This page may combine multiple inventors who share the name “CHANG JUI-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VANGUARD INT SEMICONDUCT CORP

34 patents
US9054129B1Jun 9, 2015

Semiconductor device and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP18 citations92
US9306034B2Apr 5, 2016

Method and apparatus for power device with multiple doped regions

VANGUARD INT SEMICONDUCT CORP8 citations84
US9129989B1Sep 8, 2015

Semiconductor device and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP8 citations84
US8987820B1Mar 24, 2015

Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP9 citations84
US8803236B1Aug 12, 2014

Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP13 citations84
US8049307B2Nov 1, 2011

Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices

VANGUARD INT SEMICONDUCT CORP7 citations82
US9559200B2Jan 31, 2017

Method and apparatus for power device with multiple doped regions

VANGUARD INT SEMICONDUCT CORP2 citations73
US9502584B1Nov 22, 2016

Vertical diode and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP4 citations73
US10396196B1Aug 27, 2019

Semiconductor devices

VANGUARD INT SEMICONDUCT CORP3 citations68
US10840328B1Nov 17, 2020

Semiconductor devices having charge-absorbing structure disposed over substrate and methods for forming the semiconductor devices

VANGUARD INT SEMICONDUCT CORP2 citations66
US9391139B1Jul 12, 2016

Top-side contact structure and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP2 citations62
US9048312B2Jun 2, 2015

Semiconductor device and method for forming the same

VANGUARD INT SEMICONDUCT CORP2 citations62
US9263436B2Feb 16, 2016

Semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP2 citations61
US12566295B2Mar 3, 2026

Photonic integrated circuit structure and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP0 citations60
US7682955B1Mar 23, 2010

Method for forming deep well of power device

VANGUARD INT SEMICONDUCT CORP4 citations60
US11398557B2Jul 26, 2022

Semiconductor device

VANGUARD INT SEMICONDUCT CORP0 citations55
US10573738B2Feb 25, 2020

Method and apparatus for power device with multiple doped regions

VANGUARD INT SEMICONDUCT CORP0 citations52
US10205014B2Feb 12, 2019

Method and apparatus for power device with multiple doped regions

VANGUARD INT SEMICONDUCT CORP0 citations52
US9548375B1Jan 17, 2017

Vertical diode and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP0 citations52
US9443943B2Sep 13, 2016

Semiconductor device and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP0 citations52
US9390983B1Jul 12, 2016

Semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP0 citations52
US9324785B2Apr 26, 2016

Semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP1 citations52
US10056260B2Aug 21, 2018

Schottky diode with dielectrically isolated diffusions, and method of manufacturing the same

VANGUARD INT SEMICONDUCT CORP1 citations51
US9666485B2May 30, 2017

Method for forming semiconductor device having super-junction structures

VANGUARD INT SEMICONDUCT CORP0 citations51
US9646964B2May 9, 2017

Semiconductor device

VANGUARD INT SEMICONDUCT CORP0 citations51
US9478644B1Oct 25, 2016

Semiconductor device

VANGUARD INT SEMICONDUCT CORP1 citations51
US9406742B2Aug 2, 2016

Semiconductor device having super-junction structures

VANGUARD INT SEMICONDUCT CORP0 citations51
US12474525B2Nov 18, 2025

Semiconductor device and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP0 citations50
US9634099B2Apr 25, 2017

Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP0 citations42
US10347524B2Jul 9, 2019

Trench isolation structures and methods for forming the same

VANGUARD INT SEMICONDUCT CORP0 citations41
US9773681B2Sep 26, 2017

Semiconductor device with a trench and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP0 citations41
US9773902B2Sep 26, 2017

Trench-gate semiconductor device and method for forming the same

VANGUARD INT SEMICONDUCT CORP0 citations41
US9324786B2Apr 26, 2016

Semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP0 citations41
US9178057B2Nov 3, 2015

Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same

VANGUARD INT SEMICONDUCT CORP0 citations41

LIN GEENG-LIH

1 patent

CHANG JUI CHUN

1 patent

JOU YEH-NING

1 patent

CHANG JUI-CHUN

1 patent