Inventor
SHIMAMOTO SATOSHI
JP49 patents
⚠️ This page may combine multiple inventors who share the name “SHIMAMOTO SATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI INT ELECTRIC INC
41 patentsUS9929005B1Mar 27, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC345 citations98
US9613798B2Apr 4, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC8 citations84
US9472391B2Oct 18, 2016
Semiconductor device manufacturing method
HITACHI INT ELECTRIC INC11 citations84
US9349586B2May 24, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC8 citations84
US9218959B2Dec 22, 2015
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC6 citations84
US9054046B2Jun 9, 2015
Method of manufacturing semiconductor device and method of processing substrate
HITACHI INT ELECTRIC INC10 citations84
US8987146B2Mar 24, 2015
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC6 citations80
US10490400B2Nov 26, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC4 citations73
US9890458B2Feb 13, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC3 citations73
US9793107B2Oct 17, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC4 citations73
US9732426B2Aug 15, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC2 citations73
US9698007B2Jul 4, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC3 citations73
US9478413B2Oct 25, 2016
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC3 citations73
US9460911B2Oct 4, 2016
Method of manufacturing semiconductor device and substrate processing method
HITACHI INT ELECTRIC INC4 citations73
US8785333B2Jul 22, 2014
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC6 citations73
US10720325B2Jul 21, 2020
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC3 citations72
US10607833B2Mar 31, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC2 citations72
US9773661B2Sep 26, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC3 citations71
US9837261B2Dec 5, 2017
Method of manufacturing semiconductor device and substrate processing method
HITACHI INT ELECTRIC INC1 citations63
US9524867B2Dec 20, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC2 citations63
US10163910B2Dec 25, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC0 citations52
US10115583B2Oct 30, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC0 citations52
US10066298B2Sep 4, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations52
US9991179B2Jun 5, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC1 citations52
US9978587B2May 22, 2018
Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9865458B2Jan 9, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9831082B2Nov 28, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC1 citations52
US9741556B2Aug 22, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9685455B1Jun 20, 2017
Method of manufacturing semiconductor device having 3D structure
HITACHI INT ELECTRIC INC0 citations52
US9673043B2Jun 6, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9460916B2Oct 4, 2016
Method of manufacturing semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC1 citations52
US9431240B2Aug 30, 2016
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC1 citations52
US9355866B2May 31, 2016
Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC0 citations52
US10199219B2Feb 5, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations51
US10290492B2May 14, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations50
US10032629B2Jul 24, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations50
US9899211B2Feb 20, 2018
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC1 citations48
US10910214B2Feb 2, 2021
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations47
US10090322B2Oct 2, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC0 citations42
US9640387B2May 2, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations42
US10134586B2Nov 20, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations40
KOBE STEEL LTD
3 patentsUS5981301ANov 9, 1999
Regeneration method and apparatus of wafer and substrate
KOBE STEEL LTD19 citations84
US5500170AMar 19, 1996
Heating and extruding method and device for bulk preform
KOBE STEEL LTD10 citations71
US5458838AOct 17, 1995
Heating and extruding method for bulk preform
KOBE STEEL LTD7 citations71
KOKUSAI ELECTRIC CORP
2 patentsUS11094532B2Aug 17, 2021
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US10604842B2Mar 31, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP1 citations61