Inventor
KRAFT JOCHEN
AT33 patents
⚠️ This page may combine multiple inventors who share the name “KRAFT JOCHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AMS AG
16 patentsUS10684412B2Jun 16, 2020
Semiconductor device with photonic and electronic functionality and method for manufacturing a semiconductor device
AMS AG2 citations71
US9753218B2Sep 5, 2017
Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror
AMS AG3 citations70
US11668636B2Jun 6, 2023
Particle density sensor using evanescent wave of waveguide
AMS AG2 citations64
US10340254B2Jul 2, 2019
Method of producing an interposer-chip-arrangement for dense packaging of chips
AMS AG0 citations52
US9818724B2Nov 14, 2017
Interposer-chip-arrangement for dense packaging of chips
AMS AG0 citations52
US9768131B2Sep 19, 2017
Method of producing a semiconductor device with protruding contacts
AMS AG1 citations49
US11764109B2Sep 19, 2023
Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via
AMS AG0 citations48
US9995894B2Jun 12, 2018
Semiconductor device with optical and electrical vias
AMS AG0 citations48
US12211769B2Jan 28, 2025
Through-substrate via and method for manufacturing a through-substrate via
AMS AG0 citations47
US11474039B2Oct 18, 2022
Chemical sensing device using fluorescent sensing material
AMS AG0 citations47
US11367672B2Jun 21, 2022
Semiconductor device with through-substrate via
AMS AG0 citations47
US11355386B2Jun 7, 2022
Method for manufacturing a semiconductor device and semiconductor device
AMS AG0 citations47
US11127656B2Sep 21, 2021
Crack-resistant semiconductor devices
AMS AG0 citations47
US8969193B2Mar 3, 2015
Method of producing a semiconductor device having an interconnect through the substrate
AMS AG0 citations42
US10468541B2Nov 5, 2019
Semiconductor device with through-substrate via and corresponding method of manufacture
AMS AG0 citations36
US9245843B2Jan 26, 2016
Semiconductor device with internal substrate contact and method of production
AMS AG0 citations36
KRAFT JOCHEN
5 patentsUS8623762B2Jan 7, 2014
Semiconductor device and a method for making the semiconductor device
KRAFT JOCHEN4 citations71
US8134179B2Mar 13, 2012
Photodiode with a reduced dark current and method for the production thereof
KRAFT JOCHEN3 citations58
US8633107B2Jan 21, 2014
Method of producing a semiconductor device and semiconductor device having a through-wafer interconnect
KRAFT JOCHEN0 citations39
US8884442B2Nov 11, 2014
Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact
KRAFT JOCHEN0 citations35
US9018726B2Apr 28, 2015
Photodiode and production method
KRAFT JOCHEN0 citations34
AUSTRIAMICROSYSTEMS AG
4 patentsUS8378496B2Feb 19, 2013
Semiconductor substrate with interlayer connection and method for production of a semiconductor substrate with interlayer connection
AUSTRIAMICROSYSTEMS AG27 citations92
US7618871B2Nov 17, 2009
Method for the production of a bipolar transistor comprising an improved base terminal
AUSTRIAMICROSYSTEMS AG5 citations60
US7863170B2Jan 4, 2011
Semiconductor body comprising a transistor structure and method for producing a transistor structure
AUSTRIAMICROSYSTEMS AG6 citations59
US7629628B2Dec 8, 2009
Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance
AUSTRIAMICROSYSTEMS AG0 citations50