Inventor

CHANG YU-HSING

TW34 patents

⚠️ This page may combine multiple inventors who share the name “CHANG YU-HSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG YU-HSING

TAIWAN SEMICONDUCTOR MFG CO LTD

RRAM cell with bottom electrode

Cell boundary structure for embedded memory

Semiconductor device and method of forming the same

Semiconductor device and method of forming the same

Cell boundary structure for embedded memory

Cell boundary structure for embedded memory

HK embodied flash memory and methods of forming the same

Structure with emedded EFS3 and FinFET device

Semiconductor device and method of forming the same

High aspect ratio Bosch deep etch

Method and apparatus for high voltate transistors

Deep trench isolation structure for image sensors

Memory gate first approach to forming a split gate flash memory cell device

Deep trench capacitor including self-aligned plate contact via structures and methods of forming the same

Deposition system for high accuracy patterning

Deposition system for high accuracy patterning

Composite spacer for silicon nanocrystal memory storage

Pattern layout to prevent split gate flash memory cell failure

Hard mask layer below via structure in display device

Via landing on first and second barrier layers to reduce cleaning time of conductive structure

Semiconductor device and method of forming the same

High aspect ratio bosch deep etch

Pixel structure for displays

Via landing on first and second barrier layers to reduce cleaning time of conductive structure

Hard mask layer below via structure in display device

Cell boundary structure for embedded memory

Cell boundary structure for embedded memory

Semiconductor structure and method for manufacturing the same

Logic-compatible memory cell manufacturing method and structure thereof

Pattern layout to prevent split gate flash memory cell failure

Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storage

TAIWAN SEMICONDUCTOR MFG

HK embodied flash memory and methods of forming the same

Memory cell having resistance variable film and method of making the same

HONG MING-HWEI

Method and system for manufacturing semiconductor device