Inventor
FONTENEAU PASCAL
FR22 patents
⚠️ This page may combine multiple inventors who share the name “FONTENEAU PASCAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
9 patentsUS9905565B1Feb 27, 2018
Memory cell
ST MICROELECTRONICS SA7 citations80
US9012955B2Apr 21, 2015
MOS transistor on SOI protected against overvoltages
ST MICROELECTRONICS SA3 citations62
US9209211B2Dec 8, 2015
Vertical gate transistor and pixel structure comprising such a transistor
ST MICROELECTRONICS SA3 citations58
US9530922B2Dec 27, 2016
Overvoltage protection components in an optoelectronic circuit on SOI
ST MICROELECTRONICS SA0 citations51
US9453977B2Sep 27, 2016
Assembly of integrated circuit chips having an overvoltage protection component
ST MICROELECTRONICS SA0 citations51
US9354391B2May 31, 2016
Overvoltage protection component and an assembly of integrated circuit chips having said overvoltage protection component
ST MICROELECTRONICS SA1 citations51
US9018729B2Apr 28, 2015
Adjustable avalanche diode in an integrated circuit
ST MICROELECTRONICS SA0 citations51
US10312240B2Jun 4, 2019
Memory cell
ST MICROELECTRONICS SA0 citations48
US9478570B2Oct 25, 2016
Vertical gate transistor and pixel structure comprising such a transistor
ST MICROELECTRONICS SA1 citations48
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
5 patentsUS9165943B2Oct 20, 2015
ON-SOI integrated circuit comprising a thyristor (SCR) for protection against electrostatic discharges
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES4 citations72
US9666577B2May 30, 2017
On-SOI integrated circuit equipped with a device for protecting against electrostatic discharges
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES3 citations71
US9653476B2May 16, 2017
On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES0 citations41
US9165908B2Oct 20, 2015
On-SOI integrated circuit comprising a triac for protection against electrostatic discharges
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES0 citations41
US9029955B2May 12, 2015
Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depths
COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES0 citations41
ST MICROELECTRONICS CROLLES 2 SAS
5 patentsUS11031433B2Jun 8, 2021
Back-side illuminated image sensor
ST MICROELECTRONICS CROLLES 2 SAS3 citations70
US10978487B2Apr 13, 2021
Inverting circuit
ST MICROELECTRONICS CROLLES 2 SAS4 citations69
US11398521B2Jul 26, 2022
Back-side illuminated image sensor
ST MICROELECTRONICS CROLLES 2 SAS2 citations68
US11610933B2Mar 21, 2023
Back-side illuminated image sensor
ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US12199131B2Jan 14, 2025
Back-side illuminated image sensor
ST MICROELECTRONICS CROLLES 2 SAS0 citations58
COMMISSARIAT ENERGIE ATOMIQUE
2 patentsUS9391057B2Jul 12, 2016
Integrated circuit on SOI comprising a transistor protecting from electrostatic discharges
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US10062681B2Aug 28, 2018
SOI integrated circuit equipped with a device for protecting against electrostatic discharges
COMMISSARIAT ENERGIE ATOMIQUE0 citations50