Inventor

HONO KAZUHIRO

JP31 patents

⚠️ This page may combine multiple inventors who share the name “HONO KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONO KAZUHIRO

NAT INST MATERIALS SCIENCE

Current-perpendicular-to-plane giant magnetoresistive element, precursor thereof, and manufacturing method thereof

Monocrystalline magneto resistance element, method for producing the same and method for using same

Magnetoresistive element, magnetic head using magnetoresistive element, and magnetic reproducing device

Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used

Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction

Magnesium alloy and method for manufacturing the same

Monocrystalline magneto resistance element, method for producing the same and method for using same

Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction

Magnetoresistive element, magnetic sensor, reproducing head, and magnetic recording and reproducing device

Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same

Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same

NAT INST FOR MATERIALS SCIENCE

Co2Fe-based heusler alloy and spintronics devices using the same

Current-perpendicular-to-plane magneto-resistance effect element

Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same

Magnesium alloy exhibiting high strength and high ductility and method for production thereof

Sintered binary aluminum alloy powder sintered material and method for production thereof

Current-perpendicular-to-plane magneto-resistance effect element

Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application

TDK CORP

Magnetoresistive effect element containing two non-magnetic layers with different crystal structures

Magnetoresistance effect element and method for manufacturing the same

TOYOTA MOTOR CO LTD

Rare-earth nanocomposite magnet

Thermoelectric material

VARAPRASAD BOLLAPRAGADA

Electrically conductive underlayer to grow FePt granular media with (001) texture on glass substrates

TOSHIBA KK

Magnetoresistive element and magnetic memory device

AIST

Magnetic element, magnetic memory device, and magnetic sensor

SAMSUNG ELECTRONICS CO LTD

Perpendicular magnetic layer and magnetic device including the same

SUKEGAWA HIROAKI

Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same

DENKA COMPANY LTD

Electron source, manufacturing method therefor, and device comprising electron source

KISHIMOTO HIDEFUMI

Rare-earth nanocomposite magnet