Inventor

HU YUSHI

CN84 patents

⚠️ This page may combine multiple inventors who share the name “HU YUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU YUSHI

YANGTZE MEMORY TECH CO LTD

Three-dimensional memory devices having a plurality of NAND strings

Source structure of three-dimensional memory device and method for forming the same

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices having through array contacts and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices having a plurality of NAND strings

Three-dimensional memory devices

Method of forming staircase structures for three-dimensional memory device double-sided routing

Multiple-stack three-dimensional memory device and fabrication method thereof

Through array contact (TAC) for three-dimensional memory devices

Source structure of three-dimensional memory device and method for forming the same

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory devices having through array contacts and methods for forming the same

Memory device and forming method thereof

Memory cell structure of a three-dimensional memory device

Memory cell structure of a three-dimensional memory device

Method for forming dual-deck channel hole structure of three-dimensional memory device

Through array contact (TAC) for three-dimensional memory devices

Multiple-stack three-dimensional memory device and fabrication method thereof

Memory cell structure of a three-dimensional memory device

Multiple-stack three-dimensional memory device and fabrication method thereof

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer

Three-dimensional memory devices having through array contacts and methods for forming the same

Three-dimensional memory devices having through array contacts and methods for forming the same

Three-dimensional memory devices having a plurality of NAND strings

MICRON TECHNOLOGY INC

Methods of forming NAND memory arrays

Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor

NAND memory arrays

Source material for electronic device applications

Integrated structures

Conductive structures, wordlines and transistors

Memory having a continuous channel

Memory devices

Memory arrays and methods of fabricating integrated structure

Memory cell pillar including source junction plug

Memory cell pillar including source junction plug

Method providing an epitaxial growth having a reduction in defects and resulting structure

Gate stacks

Memory having a continuous channel

Integrated structures

Methods of forming assemblies having heavily doped regions

Memory having a continuous channel

Integrated structures

Methods of fabricating integrated structures

Integrated structures

Memory arrays

Memory cell pillar including source junction plug

WUXI PETABYTE TECH CO LTD

Three-dimensional ferroelectric memory devices

ERICSSON TELEFON AB L M (publ)

Dual-band signal transmission