Inventor
JENG CHI-CHERNG
TW117 patents
⚠️ This page may combine multiple inventors who share the name “JENG CHI-CHERNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS10276620B2Apr 30, 2019
Image sensor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10014224B2Jul 3, 2018
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9640456B2May 2, 2017
Support structure for integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9502538B2Nov 22, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9490365B2Nov 8, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9768221B2Sep 19, 2017
Pad structure layout for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10340192B2Jul 2, 2019
FinFET gate structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10510877B2Dec 17, 2019
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10340301B2Jul 2, 2019
Support structure for integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10056426B2Aug 21, 2018
Apparatus and method for fabricating a light guiding grid
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10037921B2Jul 31, 2018
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9985122B2May 29, 2018
Semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9842932B1Dec 12, 2017
FinFET with P/N stacked fins and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9773911B2Sep 26, 2017
Fin field effect transistor and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9659859B2May 23, 2017
Metal pad offset for multi-layer metal layout
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9591242B2Mar 7, 2017
Black level control for image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9490346B2Nov 8, 2016
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10777592B2Sep 15, 2020
Image sensor and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10510671B2Dec 17, 2019
Method for forming semiconductor device structure with conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9978790B2May 22, 2018
Image sensor and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9627426B2Apr 18, 2017
Image sensor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9548329B2Jan 17, 2017
Backside illuminated image sensor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11309423B2Apr 19, 2022
Fin field effect transistor (finFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10276720B2Apr 30, 2019
Method for forming fin field effect transistor (FINFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9824929B2Nov 21, 2017
FinFET gate structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US9721883B1Aug 1, 2017
Integrated circuit and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations71
US9558955B2Jan 31, 2017
Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9324752B2Apr 26, 2016
Image sensor device with light blocking structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US9318368B2Apr 19, 2016
Photomask and method for forming dual STI structure by using the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations69
US9698214B1Jul 4, 2017
Capacitor structure of integrated circuit chip and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations67
US11271102B2Mar 8, 2022
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10998194B2May 4, 2021
Metal gate stack having TaAlCN layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9543343B2Jan 10, 2017
Mechanisms for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9478660B2Oct 25, 2016
Protection layer on fin of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9473719B2Oct 18, 2016
Protection layer in CMOS image sensor array region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9419048B2Aug 16, 2016
Method of manufracturing structure of dielectric grid for a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12087643B2Sep 10, 2024
Structure and formation method of fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626435B2Apr 11, 2023
Image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
11 patentsUS9337192B2May 10, 2016
Metal gate stack having TaAlCN layer
TAIWAN SEMICONDUCTOR MFG13 citations93
US9130072B1Sep 8, 2015
Backside illuminated image sensor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG27 citations92
US9024369B2May 5, 2015
Metal shield structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG8 citations84
US9293490B2Mar 22, 2016
Deep trench isolation with air-gap in backside illumination image sensor chips
TAIWAN SEMICONDUCTOR MFG9 citations82
US9123839B2Sep 1, 2015
Image sensor with stacked grid structure
TAIWAN SEMICONDUCTOR MFG8 citations80
US9397129B2Jul 19, 2016
Dielectric film for image sensor
TAIWAN SEMICONDUCTOR MFG3 citations73
US9337303B2May 10, 2016
Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer
TAIWAN SEMICONDUCTOR MFG6 citations73
US9060144B2Jun 16, 2015
Image sensor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG4 citations73
US8816415B2Aug 26, 2014
Photodiode with concave reflector
TAIWAN SEMICONDUCTOR MFG4 citations73
US9130077B2Sep 8, 2015
Structure of dielectric grid with a metal pillar for semiconductor device
TAIWAN SEMICONDUCTOR MFG6 citations72
US9224781B2Dec 29, 2015
Structure of dielectric grid for a semiconductor device
TAIWAN SEMICONDUCTOR MFG1 citations63
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