P

Inventor

JENG CHI-CHERNG

TW117 patents
⚠️ This page may combine multiple inventors who share the name “JENG CHI-CHERNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US10276620B2Apr 30, 2019

Image sensor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10014224B2Jul 3, 2018

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9640456B2May 2, 2017

Support structure for integrated circuitry

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9502538B2Nov 22, 2016

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9490365B2Nov 8, 2016

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9768221B2Sep 19, 2017

Pad structure layout for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10340192B2Jul 2, 2019

FinFET gate structure and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10510877B2Dec 17, 2019

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10340301B2Jul 2, 2019

Support structure for integrated circuitry

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10056426B2Aug 21, 2018

Apparatus and method for fabricating a light guiding grid

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10037921B2Jul 31, 2018

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9985122B2May 29, 2018

Semiconductor structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9842932B1Dec 12, 2017

FinFET with P/N stacked fins and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9773911B2Sep 26, 2017

Fin field effect transistor and fabricating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9659859B2May 23, 2017

Metal pad offset for multi-layer metal layout

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9591242B2Mar 7, 2017

Black level control for image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9490346B2Nov 8, 2016

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10777592B2Sep 15, 2020

Image sensor and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10510671B2Dec 17, 2019

Method for forming semiconductor device structure with conductive line

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9978790B2May 22, 2018

Image sensor and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9627426B2Apr 18, 2017

Image sensor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9548329B2Jan 17, 2017

Backside illuminated image sensor and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11309423B2Apr 19, 2022

Fin field effect transistor (finFET) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10276720B2Apr 30, 2019

Method for forming fin field effect transistor (FINFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9824929B2Nov 21, 2017

FinFET gate structure and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US9721883B1Aug 1, 2017

Integrated circuit and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations71
US9558955B2Jan 31, 2017

Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9324752B2Apr 26, 2016

Image sensor device with light blocking structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US9318368B2Apr 19, 2016

Photomask and method for forming dual STI structure by using the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations69
US9698214B1Jul 4, 2017

Capacitor structure of integrated circuit chip and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations67
US11271102B2Mar 8, 2022

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10998194B2May 4, 2021

Metal gate stack having TaAlCN layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9543343B2Jan 10, 2017

Mechanisms for forming image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9478660B2Oct 25, 2016

Protection layer on fin of fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9473719B2Oct 18, 2016

Protection layer in CMOS image sensor array region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9419048B2Aug 16, 2016

Method of manufracturing structure of dielectric grid for a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12087643B2Sep 10, 2024

Structure and formation method of fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626435B2Apr 11, 2023

Image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

11 patents

IND TECH RES INST

1 patent

Showing the top 50 of 117 patents by PatentIndex Score.