Inventor
NAKAI MASANORI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “NAKAI MASANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
16 patentsUS4260906AApr 7, 1981
Semiconductor device and logic circuit constituted by the semiconductor device
TOKYO SHIBAURA ELECTRIC CO7 citations73
US4091296AMay 23, 1978
Semiconductor R-S flip-flop circuit
TOKYO SHIBAURA ELECTRIC CO7 citations73
US4071774AJan 31, 1978
Integrated injection logic with both fan in and fan out Schottky diodes, serially connected between stages
TOKYO SHIBAURA ELECTRIC CO7 citations73
US4058419ANov 15, 1977
Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO8 citations73
US4489247ADec 18, 1984
Integrated injection logic circuit with test pads on injector common line
TOKYO SHIBAURA ELECTRIC CO5 citations62
US4470061ASep 4, 1984
Integrated injection logic
TOKYO SHIBAURA ELECTRIC CO5 citations62
US4459606AJul 10, 1984
Integrated injection logic semiconductor devices
TOKYO SHIBAURA ELECTRIC CO3 citations62
US4172384AOct 30, 1979
Temperature measuring apparatus
TOKYO SHIBAURA ELECTRIC CO5 citations62
US4153487AMay 8, 1979
Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO3 citations62
US4151019AApr 24, 1979
Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO6 citations62
US4110634AAug 29, 1978
Gate circuit
TOKYO SHIBAURA ELECTRIC CO4 citations62
US4065187ADec 27, 1977
Semiconductor latch circuit using integrated logic units and Schottky diode in combination
TOKYO SHIBAURA ELECTRIC CO2 citations62
US4064526ADec 20, 1977
I.I.L. with graded base inversely operated transistor
TOKYO SHIBAURA ELECTRIC CO6 citations62
US4054900AOct 18, 1977
I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor
TOKYO SHIBAURA ELECTRIC CO2 citations62
US4464589AAug 7, 1984
IL Buffer having higher breakdown levels
TOKYO SHIBAURA ELECTRIC CO3 citations58
US4119998AOct 10, 1978
Integrated injection logic with both grid and internal double-diffused injectors
TOKYO SHIBAURA ELECTRIC CO0 citations41
MAZDA MOTOR
2 patentsUS11161196B2Nov 2, 2021
Metallic member bonding device for pressing rod-shaped or cylindrical first metallic member into hole portion of annular second metallic member to bond the same and bonding method therefor
MAZDA MOTOR1 citations62
US8356397B2Jan 22, 2013
Manufacturing method of clutch for automatic transmission and automatic transmission
MAZDA MOTOR0 citations33