Inventor

YEN ANTHONY

TW151 patents

⚠️ This page may combine multiple inventors who share the name “YEN ANTHONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YEN ANTHONY

TAIWAN SEMICONDUCTOR MFG CO LTD

Lithography process

Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity

Method of making an extreme ultraviolet pellicle

Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof

EUV focus monitoring systems and methods

Lithography system with an embedded cleaning module

Mask cleaning

Pellicle fabrication methods and structures thereof

Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity

Pellicle structure and method for forming the same

EUV vessel inspection method and related system

Pellicle structures and methods of fabricating thereof

EUV lithography system and method with optimized throughput and stability

Pellicle fabrication methods and structures thereof

System and method for performing lithography process in semiconductor device fabrication

Method for integrated circuit patterning

Extreme ultraviolet lithography system, device, and method for printing low pattern density features

Pellicle assembly and fabrication methods thereof

Pellicle for EUV mask and fabrication thereof

Extreme ultraviolet lithography process and mask

Method to mitigate defect printability for ID pattern

EUV mask and manufacturing method by using the same

Extreme ultraviolet lithography process and mask

Method of making an extreme ultraviolet pellicle

TAIWAN SEMICONDUCTOR MFG

Integrated circuit layout design

Method of pitch halving

Integrated circuit layout design

Removal of line end shortening in microlithography and mask set for removal

Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish

Method to define multiple layer patterns using a single exposure

Dual damascene method employing sacrificial via fill layer

Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish

Reducing photoresist shrinkage via plasma treatment

Reflective mask and method of making same

Method to define multiple layer patterns with a single exposure by E-beam lithography

Multiple exposures in extreme ultraviolet lithography

Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control

Process flow and pellicle type for 157 nm mask making

Defocus-invariant exposure for regular patterns

LU YEN-CHENG

Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same

Method for mask fabrication and repair

Extreme ultraviolet lithography process and mask

LEE HSIN-CHANG

Method of fabricating a lithography mask

Reduce mask overlay error by removing film deposited on blank of mask

YU SHINN-SHENG

Extreme ultraviolet lithography process and mask

HSU PEI-CHENG

Reflective mask and method of making same

CHEN CHIA-JEN

Mask and method for forming the mask

SHIH CHIA-TSUNG

Phase shift mask for extreme ultraviolet lithography and method of fabricating same

TEXAS INSTRUMENTS INC

Optical illumination system and associated exposure apparatus

SHIEH MING-FENG

Method of fabrication of a semiconductor device having reduced pitch