Inventor
BENCHER CHRISTOPHER DENNIS
US79 patents
⚠️ This page may combine multiple inventors who share the name “BENCHER CHRISTOPHER DENNIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
49 patentsUS6924191B2Aug 2, 2005
Method for fabricating a gate structure of a field effect transistor
APPLIED MATERIALS INC452 citations99
US6541397B1Apr 1, 2003
Removable amorphous carbon CMP stop
APPLIED MATERIALS INC360 citations99
US6355571B1Mar 12, 2002
Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
APPLIED MATERIALS INC98 citations99
US7709396B2May 4, 2010
Integral patterning of large features along with array using spacer mask patterning process flow
APPLIED MATERIALS INC115 citations98
US6573030B1Jun 3, 2003
Method for depositing an amorphous carbon layer
APPLIED MATERIALS INC1,317 citations98
US6841341B2Jan 11, 2005
Method of depositing an amorphous carbon layer
APPLIED MATERIALS INC78 citations97
US7223526B2May 29, 2007
Method of depositing an amorphous carbon layer
APPLIED MATERIALS INC50 citations96
US6852647B2Feb 8, 2005
Removable amorphous carbon CMP stop
APPLIED MATERIALS INC35 citations96
US7335462B2Feb 26, 2008
Method of depositing an amorphous carbon layer
APPLIED MATERIALS INC24 citations92
US6946401B2Sep 20, 2005
Plasma treatment for copper oxide reduction
APPLIED MATERIALS INC28 citations92
US7332262B2Feb 19, 2008
Photolithography scheme using a silicon containing resist
APPLIED MATERIALS INC23 citations91
US6967072B2Nov 22, 2005
Photolithography scheme using a silicon containing resist
APPLIED MATERIALS INC41 citations91
US6853043B2Feb 8, 2005
Nitrogen-free antireflective coating for use with photolithographic patterning
APPLIED MATERIALS INC41 citations91
US10571809B1Feb 25, 2020
Half tone scheme for maskless lithography
APPLIED MATERIALS INC9 citations84
US10256382B2Apr 9, 2019
Collimated OLED light field display
APPLIED MATERIALS INC5 citations84
US9748148B2Aug 29, 2017
Localized stress modulation for overlay and EPE
APPLIED MATERIALS INC8 citations84
US9478421B2Oct 25, 2016
Optically tuned hardmask for multi-patterning applications
APPLIED MATERIALS INC6 citations84
US9411237B2Aug 9, 2016
Resist hardening and development processes for semiconductor device manufacturing
APPLIED MATERIALS INC11 citations84
US9177796B2Nov 3, 2015
Optically tuned hardmask for multi-patterning applications
APPLIED MATERIALS INC7 citations84
US8357618B2Jan 22, 2013
Frequency doubling using a photo-resist template mask
APPLIED MATERIALS INC9 citations84
US7608300B2Oct 27, 2009
Methods and devices to reduce defects in dielectric stack structures
APPLIED MATERIALS INC12 citations84
US12117732B2Oct 15, 2024
Image stabilization for digital lithography
APPLIED MATERIALS INC3 citations75
US7507677B2Mar 24, 2009
Removable amorphous carbon CMP stop
APPLIED MATERIALS INC4 citations74
US6700202B2Mar 2, 2004
Semiconductor device having reduced oxidation interface
APPLIED MATERIALS INC8 citations74
US10559730B2Feb 11, 2020
Collimated LED light field display
APPLIED MATERIALS INC2 citations73
US10503076B1Dec 10, 2019
Reserving spatial light modulator sections to address field non-uniformities
APPLIED MATERIALS INC4 citations73
US10495979B1Dec 3, 2019
Half tone scheme for maskless lithography
APPLIED MATERIALS INC2 citations73
US10490599B2Nov 26, 2019
Collimated, directional micro-LED light field display
APPLIED MATERIALS INC2 citations73
US10416550B2Sep 17, 2019
Method to reduce line waviness
APPLIED MATERIALS INC3 citations73
US9791786B1Oct 17, 2017
Method to reduce line waviness
APPLIED MATERIALS INC4 citations73
US7365014B2Apr 29, 2008
Reticle fabrication using a removable hard mask
APPLIED MATERIALS INC7 citations72
US9915621B2Mar 13, 2018
Extreme ultraviolet (EUV) substrate inspection system with simplified optics and method of manufacturing thereof
APPLIED MATERIALS INC4 citations71
US7105442B2Sep 12, 2006
Ashable layers for reducing critical dimensions of integrated circuit features
APPLIED MATERIALS INC9 citations71
US10474041B1Nov 12, 2019
Digital lithography with extended depth of focus
APPLIED MATERIALS INC3 citations70
US9484274B2Nov 1, 2016
Methods for reducing semiconductor substrate strain variation
APPLIED MATERIALS INC6 citations68
US12224272B2Feb 11, 2025
Manufacturing micro-LED displays to reduce subpixel crosstalk
APPLIED MATERIALS INC1 citations64
US10908507B2Feb 2, 2021
Micro LED array illumination source
APPLIED MATERIALS INC0 citations63
US9927696B2Mar 27, 2018
Method to reduce line waviness
APPLIED MATERIALS INC1 citations63
US7148156B2Dec 12, 2006
Removable amorphous carbon CMP stop
APPLIED MATERIALS INC2 citations63
US12243864B2Mar 4, 2025
Micro-LED displays to reduce subpixel crosstalk
APPLIED MATERIALS INC0 citations62
US11815818B2Nov 14, 2023
Method to achieve non-crystalline evenly distributed shot pattern for digital lithography
APPLIED MATERIALS INC0 citations62
US11592740B2Feb 28, 2023
Wire grid polarizer manufacturing methods using frequency doubling interference lithography
APPLIED MATERIALS INC0 citations62
US11187836B2Nov 30, 2021
Method of building a 3D functional optical material layer stacking structure
APPLIED MATERIALS INC0 citations62
US10935890B2Mar 2, 2021
Half tone scheme for maskless lithography
APPLIED MATERIALS INC0 citations62
US10921714B2Feb 16, 2021
Reserving spatial light modulator sections to address field non-uniformities
APPLIED MATERIALS INC0 citations62
US10289003B2May 14, 2019
Line edge roughness reduction via step size alteration
APPLIED MATERIALS INC1 citations62
US9337051B2May 10, 2016
Method for critical dimension reduction using conformal carbon films
APPLIED MATERIALS INC2 citations62
US10394130B2Aug 27, 2019
Quarter wave light splitting
APPLIED MATERIALS INC1 citations60
US7588990B2Sep 15, 2009
Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer
APPLIED MATERIALS INC3 citations60
MEBARKI BENCHERKI
1 patentShowing the top 50 of 79 patents by PatentIndex Score.