Inventor
JOHNSON F SCOTT
US20 patents
Patents
20 patentsUS6441715B1Aug 27, 2002
Method of fabricating a miniaturized integrated circuit inductor and transformer fabrication
TEXAS INSTRUMENTS INC132 citations97
US6030874AFeb 29, 2000
Doped polysilicon to retard boron diffusion into and through thin gate dielectrics
TEXAS INSTRUMENTS INC70 citations95
US6248650B1Jun 19, 2001
Self-aligned BJT emitter contact
TEXAS INSTRUMENTS INC33 citations92
US6239477B1May 29, 2001
Self-aligned transistor contact for epitaxial layers
TEXAS INSTRUMENTS INC49 citations92
US6028345AFeb 22, 2000
Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
TEXAS INSTRUMENTS INC27 citations92
US5593905AJan 14, 1997
Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link
TEXAS INSTRUMENTS INC28 citations92
US5592017AJan 7, 1997
Self-aligned double poly BJT using sige spacers as extrinsic base contacts
TEXAS INSTRUMENTS INC28 citations92
US6501152B1Dec 31, 2002
Advanced lateral PNP by implant negation
TEXAS INSTRUMENTS INC16 citations84
US5502330AMar 26, 1996
Stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link
TEXAS INSTRUMENTS INC16 citations82
US6620700B2Sep 16, 2003
Silicided undoped polysilicon for capacitor bottom plate
TEXAS INSTRUMENTS INC6 citations73
US6380609B1Apr 30, 2002
Silicided undoped polysilicon for capacitor bottom plate
TEXAS INSTRUMENTS INC5 citations73
US5629556AMay 13, 1997
High speed bipolar transistor using a patterned etch stop and diffusion source
TEXAS INSTRUMENTS INC14 citations73
US5616508AApr 1, 1997
High speed bipolar transistor using a patterned etch stop and diffusion source
TEXAS INSTRUMENTS INC10 citations73
US5541121AJul 30, 1996
Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
TEXAS INSTRUMENTS INC10 citations73
US6281530B1Aug 28, 2001
LPNP utilizing base ballast resistor
TEXAS INSTRUMENTS INC5 citations62
US6194280B1Feb 27, 2001
Method for forming a self-aligned BJT emitter contact
TEXAS INSTRUMENTS INC6 citations62
US7098098B2Aug 29, 2006
Methods for transistors formation using selective gate implantation
TEXAS INSTRUMENTS INC2 citations59
US6682994B2Jan 27, 2004
Methods for transistor gate formation using gate sidewall implantation
TEXAS INSTRUMENTS INC3 citations59
US7572693B2Aug 11, 2009
Methods for transistor formation using selective gate implantation
TEXAS INSTRUMENTS INC0 citations48
US6645804B1Nov 11, 2003
System for fabricating a metal/anti-reflective coating/insulator/metal (MAIM) capacitor
TEXAS INSTRUMENTS INC0 citations40