Inventor
BAI GANG
US32 patents
⚠️ This page may combine multiple inventors who share the name “BAI GANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
23 patentsUS6492217B1Dec 10, 2002
Complementary metal gates and a process for implementation
INTEL CORP134 citations99
US6373111B1Apr 16, 2002
Work function tuning for MOSFET gate electrodes
INTEL CORP181 citations99
US6130123AOct 10, 2000
Method for making a complementary metal gate electrode technology
INTEL CORP174 citations99
US6204103B1Mar 20, 2001
Process to make complementary silicide metal gates for CMOS technology
INTEL CORP97 citations98
US6265258B1Jul 24, 2001
Method for making a complementary metal gate electrode technology
INTEL CORP76 citations96
US6166417ADec 26, 2000
Complementary metal gates and a process for implementation
INTEL CORP82 citations96
US5861340AJan 19, 1999
Method of forming a polycide film
INTEL CORP61 citations96
US5818092AOct 6, 1998
Polycide film
INTEL CORP77 citations96
US5714418AFeb 3, 1998
Diffusion barrier for electrical interconnects in an integrated circuit
INTEL CORP84 citations96
US6998357B2Feb 14, 2006
High dielectric constant metal oxide gate dielectrics
INTEL CORP13 citations93
US6737710B2May 18, 2004
Transistor structure having silicide source/drain extensions
INTEL CORP34 citations93
US6534837B1Mar 18, 2003
Semiconductor device
INTEL CORP40 citations93
US6528856B1Mar 4, 2003
High dielectric constant metal oxide gate dielectrics
INTEL CORP22 citations93
US6794232B2Sep 21, 2004
Method of making MOSFET gate electrodes with tuned work function
INTEL CORP29 citations92
US6790731B2Sep 14, 2004
Method for tuning a work function for MOSFET gate electrodes
INTEL CORP21 citations92
US6365971B1Apr 2, 2002
Unlanded vias with a low dielectric constant material as an intraline dielectric
INTEL CORP16 citations92
US5960316ASep 28, 1999
Method to fabricate unlanded vias with a low dielectric constant material as an intraline dielectric
INTEL CORP22 citations92
US5889331AMar 30, 1999
Silicide for achieving low sheet resistance on poly-Si and low Si consumption in source/drain
INTEL CORP37 citations92
US6025254AFeb 15, 2000
Low resistance gate electrode layer and method of making same
INTEL CORP16 citations84
US7187044B2Mar 6, 2007
Complementary metal gate electrode technology
INTEL CORP6 citations74
US5977634ANov 2, 1999
Diffusion barrier for electrical interconnects in an integrated circuit
INTEL CORP8 citations74
US9412860B2Aug 9, 2016
Multi-layer gate dielectric
INTEL CORP2 citations63
US6689702B2Feb 10, 2004
High dielectric constant metal oxide gate dielectrics
INTEL CORP1 citations63
ZTE CORP
4 patentsUS11190991B2Nov 30, 2021
Signal transmission method and device, and computer storage medium
ZTE CORP3 citations73
US10992409B2Apr 27, 2021
Wireless signal transmission method and device
ZTE CORP2 citations73
US11991570B2May 21, 2024
Signal transmission method and device, and computer storage medium
ZTE CORP1 citations63
US11659456B2May 23, 2023
Signal transmission method and device, and computer storage medium
ZTE CORP0 citations63