Inventor
TSUJIMURA AYUMU
JP24 patents
⚠️ This page may combine multiple inventors who share the name “TSUJIMURA AYUMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
23 patentsUS6720586B1Apr 13, 2004
Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6614059B1Sep 2, 2003
Semiconductor light-emitting device with quantum well
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations98
US5499260AMar 12, 1996
Semiconductor laser and a method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD103 citations98
US6392979B1May 21, 2002
Optical pickup and optical disk apparatus using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD56 citations96
US6030849AFeb 29, 2000
Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD66 citations96
US6911351B2Jun 28, 2005
Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6611005B2Aug 26, 2003
Method for producing semiconductor and semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6858877B2Feb 22, 2005
Nitride semiconductor, method for manufacturing the same and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US6586774B2Jul 1, 2003
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6466597B1Oct 15, 2002
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US5339326AAug 16, 1994
Reflector for semiconductor laser end-face and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US7160748B2Jan 9, 2007
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6777253B2Aug 17, 2004
Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6764871B2Jul 20, 2004
Method for fabricating a nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6940100B2Sep 6, 2005
Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6562129B2May 13, 2003
Formation method for semiconductor layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6324200B1Nov 27, 2001
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6265287B1Jul 24, 2001
Method for producing semiconductor layer for a semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6072762AJun 6, 2000
Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US5817410AOct 6, 1998
Nonlinear optical composites using linear transparent substances and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations73
US5663974ASep 2, 1997
Semiconductor laser
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US7108745B2Sep 19, 2006
Formation method for semiconductor layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6921678B2Jul 26, 2005
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63