Inventor
D EVELYN MARK PHILIP
US36 patents
⚠️ This page may combine multiple inventors who share the name “D EVELYN MARK PHILIP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GEN ELECTRIC
16 patentsUS6398867B1Jun 4, 2002
Crystalline gallium nitride and method for forming crystalline gallium nitride
GEN ELECTRIC245 citations99
US7316746B2Jan 8, 2008
Crystals for a semiconductor radiation detector and method for making the crystals
GEN ELECTRIC94 citations98
US7078731B2Jul 18, 2006
Gallium nitride crystals and wafers and method of making
GEN ELECTRIC270 citations98
US7063741B2Jun 20, 2006
High pressure high temperature growth of crystalline group III metal nitrides
GEN ELECTRIC336 citations98
US7053413B2May 30, 2006
Homoepitaxial gallium-nitride-based light emitting device and method for producing
GEN ELECTRIC411 citations98
US7122827B2Oct 17, 2006
Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
GEN ELECTRIC75 citations97
US7009215B2Mar 7, 2006
Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
GEN ELECTRIC99 citations97
US6806508B2Oct 19, 2004
Homoepitaxial gallium nitride based photodetector and method of producing
GEN ELECTRIC100 citations97
US7125453B2Oct 24, 2006
High temperature high pressure capsule for processing materials in supercritical fluids
GEN ELECTRIC98 citations96
US6541115B2Apr 1, 2003
Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles
GEN ELECTRIC97 citations96
US7291544B2Nov 6, 2007
Homoepitaxial gallium nitride based photodetector and method of producing
GEN ELECTRIC51 citations95
US7102158B2Sep 5, 2006
Light-based system for detecting analytes
GEN ELECTRIC51 citations95
US6372002B1Apr 16, 2002
Functionalized diamond, methods for producing same, abrasive composites and abrasive tools comprising functionalized diamonds
GEN ELECTRIC95 citations95
US7704324B2Apr 27, 2010
Apparatus for processing materials in supercritical fluids and methods thereof
GEN ELECTRIC97 citations94
US7098487B2Aug 29, 2006
Gallium nitride crystal and method of making same
GEN ELECTRIC100 citations94
US7572425B2Aug 11, 2009
System and method for producing solar grade silicon
GEN ELECTRIC38 citations91
MOMENTIVE PERFORMANCE MAT INC
13 patentsUS7642122B2Jan 5, 2010
Method for forming nitride crystals
MOMENTIVE PERFORMANCE MAT INC95 citations97
US7582498B2Sep 1, 2009
Resonant cavity light emitting devices and associated method
MOMENTIVE PERFORMANCE MAT INC69 citations97
US7368015B2May 6, 2008
Apparatus for producing single crystal and quasi-single crystal, and associated method
MOMENTIVE PERFORMANCE MAT INC134 citations97
US7625446B2Dec 1, 2009
High temperature high pressure capsule for processing materials in supercritical fluids
MOMENTIVE PERFORMANCE MAT INC76 citations96
US7705276B2Apr 27, 2010
Heater, apparatus, and associated method
MOMENTIVE PERFORMANCE MAT INC92 citations95
US7859008B2Dec 28, 2010
Crystalline composition, wafer, device, and associated method
MOMENTIVE PERFORMANCE MAT INC9 citations84
US7786503B2Aug 31, 2010
Gallium nitride crystals and wafers and method of making
MOMENTIVE PERFORMANCE MAT INC13 citations84
US8039412B2Oct 18, 2011
Crystalline composition, device, and associated method
MOMENTIVE PERFORMANCE MAT INC16 citations83
US7935382B2May 3, 2011
Method for making crystalline composition
MOMENTIVE PERFORMANCE MAT INC13 citations83
US7527742B2May 5, 2009
Etchant, method of etching, laminate formed thereby, and device
MOMENTIVE PERFORMANCE MAT INC15 citations83
US7638815B2Dec 29, 2009
Crystalline composition, wafer, and semi-conductor structure
MOMENTIVE PERFORMANCE MAT INC5 citations62
US7942970B2May 17, 2011
Apparatus for making crystalline composition
MOMENTIVE PERFORMANCE MAT INC5 citations61
US8357945B2Jan 22, 2013
Gallium nitride crystal and method of making same
MOMENTIVE PERFORMANCE MAT INC0 citations52
DIAMOND INNOVATIONS INC
2 patentsSORAA INC
2 patentsUS10975492B2Apr 13, 2021
Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
SORAA INC1 citations72
US10208396B2Feb 19, 2019
Crystalline gallium nitride containing flourine
SORAA INC0 citations51