P

Inventor

CONCANNON ANN

US27 patents
⚠️ This page may combine multiple inventors who share the name “CONCANNON ANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAT SEMICONDUCTOR CORP

26 patents
US7023029B1Apr 4, 2006

Complementary vertical SCRs for SOI and triple well processes

NAT SEMICONDUCTOR CORP23 citations92
US6906357B1Jun 14, 2005

Electrostatic discharge (ESD) protection structure with symmetrical positive and negative ESD protection

NAT SEMICONDUCTOR CORP25 citations92
US6784029B1Aug 31, 2004

Bi-directional ESD protection structure for BiCMOS technology

NAT SEMICONDUCTOR CORP35 citations92
US6717219B1Apr 6, 2004

High holding voltage ESD protection structure for BiCMOS technology

NAT SEMICONDUCTOR CORP24 citations92
US7056761B1Jun 6, 2006

Avalanche diode with breakdown voltage controlled by gate length

NAT SEMICONDUCTOR CORP26 citations89
US7268398B1Sep 11, 2007

ESD protection cell with active pwell resistance control

NAT SEMICONDUCTOR CORP10 citations84
US7027278B1Apr 11, 2006

Stacked high-voltage ESD protection clamp with triggering voltage circuit control

NAT SEMICONDUCTOR CORP11 citations84
US6946690B1Sep 20, 2005

High holding voltage ESD protection structure and method

NAT SEMICONDUCTOR CORP13 citations84
US6894881B1May 17, 2005

ESD protection methods and devices using additional terminal in the diode structures

NAT SEMICONDUCTOR CORP13 citations84
US6822294B1Nov 23, 2004

High holding voltage LVTSCR

NAT SEMICONDUCTOR CORP14 citations84
US6720624B1Apr 13, 2004

LVTSCR-like structure with internal emitter injection control

NAT SEMICONDUCTOR CORP14 citations84
US7929262B1Apr 19, 2011

Method and structure for avoiding hot carrier degradation and soft leakage damage to ESD protection circuit

NAT SEMICONDUCTOR CORP7 citations82
US7057215B1Jun 6, 2006

PMOS based LVTSCR and IGBT-like structure

NAT SEMICONDUCTOR CORP9 citations74
US6911679B1Jun 28, 2005

LVTSCR with compact design

NAT SEMICONDUCTOR CORP6 citations74
US6853053B1Feb 8, 2005

BJT based ESD protection structure with improved current stability

NAT SEMICONDUCTOR CORP6 citations74
US6841829B1Jan 11, 2005

Self protecting bipolar SCR

NAT SEMICONDUCTOR CORP8 citations74
US6690069B1Feb 10, 2004

Low voltage complement ESD protection structures

NAT SEMICONDUCTOR CORP9 citations74
US6660602B1Dec 9, 2003

Stand-alone triggering structure for ESD protection of high voltage CMOS

NAT SEMICONDUCTOR CORP7 citations74
US7193251B1Mar 20, 2007

ESD protection cluster and method of providing multi-port ESD protection

NAT SEMICONDUCTOR CORP4 citations63
US6970335B1Nov 29, 2005

LVTSCR ESD protection clamp with dynamically controlled blocking junction

NAT SEMICONDUCTOR CORP5 citations63
US6952039B1Oct 4, 2005

ESD protection snapback structure for overvoltage self-protecting I/O cells

NAT SEMICONDUCTOR CORP4 citations63
US6933588B1Aug 23, 2005

High performance SCR-like BJT ESD protection structure

NAT SEMICONDUCTOR CORP4 citations63
US7064397B1Jun 20, 2006

Silicon controlled rectifier structure with improved punch through resistance

NAT SEMICONDUCTOR CORP3 citations61
US7115951B1Oct 3, 2006

Low triggering voltage ESD protection structure and method for reducing the triggering voltage

NAT SEMICONDUCTOR CORP3 citations59
US6998651B1Feb 14, 2006

LVTSCR-like structure with blocking junction under the polygate

NAT SEMICONDUCTOR CORP5 citations58
US7387918B1Jun 17, 2008

Method of forming a silicon controlled rectifier structure with improved punch through resistance

NAT SEMICONDUCTOR CORP1 citations50

NAT UNIV IRELAND CORK

1 patent