Inventor
BAIE XAVIER
US6 patents
Patents
6 patentsUS6825529B2Nov 30, 2004
Stress inducing spacers
IBM234 citations99
US6717216B1Apr 6, 2004
SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device
IBM282 citations99
US7374987B2May 20, 2008
Stress inducing spacers
IBM32 citations92
US6884667B1Apr 26, 2005
Field effect transistor with stressed channel and method for making same
IBM36 citations92
US6624478B2Sep 23, 2003
High mobility transistors in SOI and method for forming
IBM34 citations92
US6962838B2Nov 8, 2005
High mobility transistors in SOI and method for forming
IBM8 citations74