Inventor
MARTELLONI YANNICK
DE13 patents
⚠️ This page may combine multiple inventors who share the name “MARTELLONI YANNICK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS7627792B2Dec 1, 2009
Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure
INFINEON TECHNOLOGIES AG23 citations89
US7504695B2Mar 17, 2009
SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell
INFINEON TECHNOLOGIES AG10 citations83
US6536003B1Mar 18, 2003
Testable read-only memory for data memory redundant logic
INFINEON TECHNOLOGIES AG18 citations80
US7183816B2Feb 27, 2007
Circuit and method for switching an electrical load on after a delay
INFINEON TECHNOLOGIES AG7 citations72
US7237153B2Jun 26, 2007
Integrated memory and method for testing an integrated memory
INFINEON TECHNOLOGIES AG7 citations71
US7508691B2Mar 24, 2009
Memory arrangement with low power consumption
INFINEON TECHNOLOGIES AG2 citations62
US7436721B2Oct 14, 2008
Supplying voltage to a bit line of a memory device
INFINEON TECHNOLOGIES AG3 citations62
US7161824B2Jan 9, 2007
Method for programming a memory arrangement and programmed memory arrangement
INFINEON TECHNOLOGIES AG2 citations62
US7366002B2Apr 29, 2008
Method and storage device for the permanent storage of data
INFINEON TECHNOLOGIES AG2 citations61
US7738305B2Jun 15, 2010
Read-out circuit for or in a ROM memory; ROM memory and method for reading the ROM memory
INFINEON TECHNOLOGIES AG4 citations57
US7633787B2Dec 15, 2009
ROM memory component featuring reduced leakage current, and method for writing the same
INFINEON TECHNOLOGIES AG2 citations57
US7606107B2Oct 20, 2009
Memory cell, read device for memory cell, memory assembly, and corresponding method
INFINEON TECHNOLOGIES AG0 citations52