Inventor
CHO BYUNG-KWON
KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHO BYUNG-KWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS9117692B2Aug 25, 2015
Semiconductor device having dual metal silicide layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US9929099B2Mar 27, 2018
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD7 citations82
US8889552B2Nov 18, 2014
Semiconductor device having dual metal silicide layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations78
US10985036B2Apr 20, 2021
Substrate processing apparatus and apparatus for manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10192973B2Jan 29, 2019
Methods of forming semiconductor devices including trench walls having multiple slopes
SAMSUNG ELECTRONICS CO LTD5 citations72
US9812353B2Nov 7, 2017
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11887868B2Jan 30, 2024
Substrate processing apparatus and apparatus for manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US10186485B2Jan 22, 2019
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD0 citations51
US9984921B2May 29, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9040415B2May 26, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US11302526B2Apr 12, 2022
Supercritical drying apparatus and method of drying substrate using the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US10818522B2Oct 27, 2020
Process chamber for a supercritical process and apparatus for treating substrates having the same
SAMSUNG ELECTRONICS CO LTD0 citations40