Inventor
HWANG SON-KWAN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SON-KWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS8957526B2Feb 17, 2015
Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages
SAMSUNG ELECTRONICS CO LTD19 citations92
US7875552B2Jan 25, 2011
Methods of forming integrated circuit chips having vertically extended through-substrate vias therein and chips formed thereby
SAMSUNG ELECTRONICS CO LTD7 citations84
US7777345B2Aug 17, 2010
Semiconductor device having through electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US9698051B2Jul 4, 2017
Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages
SAMSUNG ELECTRONICS CO LTD3 citations72
US7897511B2Mar 1, 2011
Wafer-level stack package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7847416B2Dec 7, 2010
Wafer level package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US10777487B2Sep 15, 2020
Integrated circuit device including through-silicon via structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7948089B2May 24, 2011
Chip stack package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US12266609B2Apr 1, 2025
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
LEE HO-JIN
3 patentsUS8415804B2Apr 9, 2013
Semiconductor chip, method of fabricating the same, and stack module and memory card including the same
LEE HO-JIN7 citations83
US9219035B2Dec 22, 2015
Integrated circuit chips having vertically extended through-substrate vias therein
LEE HO-JIN1 citations62
US8629059B2Jan 14, 2014
Methods of forming integrated circuit chips having vertically extended through-substrate vias therein
LEE HO-JIN3 citations62